2-bromophenyl methacrylate | 126969-72-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚酯
• 英文名称: 2-bromophenyl methacrylate
• 英文别名: bromophenyl methacrylate；monobromophenyl (meth)acrylate；2-Bromophenyl 2-methylprop-2-enoate；(2-bromophenyl) 2-methylprop-2-enoate
• CAS: 126969-72-0
• 化学式: C₁₀H₉BrO₂
• 分子量: 241.084
• InChiKey: OEZWIIUNRMEKGW-UHFFFAOYSA-N

物化性质

• 沸点：
  305.5±21.0 °C(Predicted)
• 密度：
  1.408±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.2
• 重原子数：
  13
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.1
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2-bromophenyl methacrylate 、 4-(3,3,3-trifluoroprop-1-en-2-yl)benzonitrile 在 乙二醇二甲醚溴化镍 、 锰 、 magnesium chloride 、 [2,2'-联吡啶]-6-羧酸 作用下， 以 二甲基亚砜 为溶剂， 以63%的产率得到4-(1,1-difluoro-3-(3-methyl-2-oxochroman-3-yl)prop-1-en-2-yl)benzonitrile
  参考文献：
  名称：

  Ni催化配体控制的烯烃的区域发散还原双碳功能化

  摘要：

  涉及分子内 Heck 环化和分子间交叉偶联的过渡金属催化的烯烃双碳官能化已成为构建具有空间拥挤的四元碳中心的杂环的强大引擎。然而，只能得到外环化/交叉偶联产物；内选择性环化/交叉偶联尚未见报道，仍然是一项艰巨的挑战。我们在此报告了烯烃的催化剂控制的双碳官能化的第一个例子，用于区域发散合成具有全碳四元中心的五元和​​六元苯并稠合内酰胺。使用手性 Pyrox 或 Phox 型双齿配体，5-外环化/交叉偶联以良好的产率顺利进行，具有出色的区域选择性和对映选择性（高达 98% ee）。当使用 C6-羧酸修饰的 2,2'-联吡啶作为配体时，通过 6-内选择性环化/交叉偶联过程以良好的收率获得了 3,4-二氢喹啉-2-酮。这种转换是模块化的，可以容忍各种功能组。配体而不是底物结构精确地决定了区域选择性模式。此外，该区域发散方案的合成价值通过生物相关分子和结构支架的制备得到了证明。4-dihydroquinolin-2-ones

  DOI：

  10.1021/jacs.1c03827

文献信息

• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP
  申请人：Shibayama Wataru

  公开号：US20110143149A1

  公开（公告）日：2011-06-16

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R 1 a R 2 b Si(R 3 ) 4-(a+b) . A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

  提供一种用于光刻的抗蚀底层膜形成组合物，用于形成可用作硬掩膜或底部防反射涂层的抗蚀底层膜，或者是不与抗蚀剂混合且具有比抗蚀剂更高的干法刻蚀速率的抗蚀底层膜。该组合物包括具有离子基的硅烷化合物，其中具有离子基的硅烷化合物是一种可水解的有机硅烷，其分子中具有一个离子基、其水解产物或水解缩合产物。该组合物用作光刻的抗蚀底层膜形成组合物。组合物包括具有离子基的硅烷化合物和不具有离子基的硅烷化合物，其中具有离子基的硅烷化合物在整个硅烷化合物中的摩尔比例小于1％，例如为0.01到0.95％。可水解的有机硅烷可以是式的化合物：R1aR2bSi（R3）4-（a+b）。通过将所述组合物按照权利要求1至14中的任一项涂布到半导体基片上并烘烤所得到的抗蚀底层膜。
• Heavy-hydrogenated (meth) acrylates, proces for producing them, polymers thereof and optical members
  申请人：Sasaki Hiroki

  公开号：US20060281884A1

  公开（公告）日：2006-12-14

  A novel compound represented by a formula [1] wherein R 1 and R 2 respectively represent a heavy or light hydrogen atom, R 3 represents a heavy or light hydrogen atom or a methyl group in which three hydrogen atoms are respectively heavy or light hydrogen atoms, R 4 represents a condensed ring group composed of a norbornane ring and a C 5-7 hydrocarbon ring provided that at least one hydrogen atom contained in the condensed ring group is a heavy hydrogen atom; and a novel polymer produced by polymerization of a composition comprising the compound are disclosed.

  本发明揭示了一种由公式[1]表示的新化合物，其中R1和R2分别表示重氢原子或轻氢原子，R3表示重氢原子或轻氢原子，或者是一个甲基基团，其中三个氢原子分别是重氢原子或轻氢原子，R4表示由一个诺博尔烷环和一个C5-7碳氢环组成的紧缩环基团，其中至少一个包含在紧缩环基团中的氢原子是重氢原子；以及由含有该化合物的组合物聚合而成的新型聚合物。
• Heavy-hydrogenated norbornyl (meth)acrylates, process for producing them, polymers thereof and optical members
  申请人：Sasaki Hiroki

  公开号：US20070027279A1

  公开（公告）日：2007-02-01

  A novel compound represented by a formula [1] wherein R 1 and R 2 respectively represent a light or heavy hydrogen atom, R 3 represents a light or heavy hydrogen atom or a methyl group in which tree hydrogen atoms are respectively light or heavy hydrogen atoms, and R 4 is a norbornyl group provided that four or more hydrogen atoms in the norbornyl group are heavy hydrogen atoms; and a novel polymer produced by polymerization of a composition comprising the compound are disclosed.

  本发明公开了一种新化合物，其化学式为[1]，其中R1和R2分别代表轻或重氢原子，R3代表轻或重氢原子或一个甲基基团，其中三个氢原子分别为轻或重氢原子，R4是一个诺博烯基团，其中诺博烯基团中的四个或更多氢原子是重氢原子；以及通过聚合包含该化合物的组合物而制得的一种新聚合物。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP
  申请人：Shibayama Wataru

  公开号：US20110287369A1

  公开（公告）日：2011-11-24

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) (1). A composition comprising a mixture of a hydrolyzable organosilane of Formula (1), and at least one organic silicon compound selected from the group consisting of a compound of Formula (2): R 4 a Si(R 5 ) 4−a (2) and a compound of Formula (3): [R 6 c Si(R 7 ) 3−c ] 2 Y b (3); a hydrolysis product of the mixture; or a hydrolysis-condensation product of the mixture.

  提供了一种用于光刻的抗蚀底层膜形成组合物，用于形成可用作硬膜的抗蚀底层膜。该抗蚀底层膜形成组合物包括含有阴离子基团的硅烷化合物，其中含有阴离子基团的硅烷化合物是一种可水解的有机硅烷，其中含有阴离子基团的有机基团与硅原子键合，阴离子基团形成盐结构，其水解产物或水解缩合产物。阴离子基团可以是羧酸阴离子、酚酸盐阴离子、磺酸盐阴离子或磷酸盐阴离子。可水解的有机硅烷可以是式（1）的化合物：R1aR2bSi（R3）4−（a+b）（1）。组合物包括式（1）的可水解有机硅烷的混合物，以及选择自化合物组中的至少一种有机硅化合物的混合物，该组具有式（2）的化合物：R4aSi（R5）4−a（2）和式（3）的化合物：[R6cSi（R7）3−c] 2Yb（3）；该混合物的水解产物；或该混合物的水解缩合产物。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING
  申请人：Nakajima Makoto

  公开号：US20120315765A1

  公开（公告）日：2012-12-13

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) wherein R 1 is Formula (2): in which R 4 is an organic group, and R 5 is a C 1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X 1 is Formula (3), Formula (4), or Formula (5): R 2 is an organic group, and R 3 is a hydrolysable group.

  提供了一种用于制备可用作硬面膜的光刻胶底层膜的抗性底层膜形成组合物。一种用于光刻胶底层膜形成的抗性底层膜形成组合物，包括硅烷化合物作为成分，所述硅烷化合物是可水解的有机硅烷、其水解产物或其水解缩合物，其中所述可水解的有机硅烷是式(1)的可水解的有机硅烷： R1aR2bSi(R3)4−(a+b) 式(1) 其中R1是式(2)： 其中R4是有机基团，R5是C1-10烷基、羟基烷基、硫化键、醚键、酯键或其组合，X1是式(3)、式(4)或式(5)： R2是有机基团，R3是可水解基团。