申请人:JSR Corporation
公开号:US20040132243A1
公开(公告)日:2004-07-08
A method of forming a cavity between metallic wirings using a polymer capable of revealing a specific heat resistant temperature and a specific heat decomposition temperature by having a specific repeating unit structure and a specific molecular weight range and of readily forming a cavity structure between metallic wirings in, for example, semiconductors. The method comprises a step of coating the surface of a first dielectric film formed on a semiconductor substrate with a cyclic olefin based addition polymer, a step of patterning the cyclic olefin based addition polymer as a void-forming polymer, a step of forming a metallic wiring in the pattern formed on the void-forming polymer, a step of forming a second dielectric film on the void-forming polymer containing a metallic wiring, and a step of removing the void-forming polymer between the multilayered wirings by heating to form a cavity between the metallic wirings.
一种利用具有特定重复单元结构和特定分子量范围的聚合物,通过具有特定耐热温度和特定热分解温度的能力来形成金属导线之间空腔的方法,例如在半导体中容易形成空腔结构。该方法包括以下步骤:在半导体衬底上形成第一介电膜的表面上涂覆环状烯基加成聚合物;将环状烯基加成聚合物作为形成空腔的聚合物进行图案化;在形成的空腔聚合物图案上形成金属导线;在包含金属导线的空腔聚合物上形成第二介电膜;通过加热去除多层金属导线之间的空腔聚合物,形成金属导线之间的空腔。