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1-methoxy-3-propoxypropan-2-ol | 53146-33-1

中文名称
——
中文别名
——
英文名称
1-methoxy-3-propoxypropan-2-ol
英文别名
——
1-methoxy-3-propoxypropan-2-ol化学式
CAS
53146-33-1
化学式
C7H16O3
mdl
——
分子量
148.202
InChiKey
BCDDMGKSSFLVKL-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    0.2
  • 重原子数:
    10
  • 可旋转键数:
    6
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    38.7
  • 氢给体数:
    1
  • 氢受体数:
    3

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为产物:
    参考文献:
    名称:
    PERFUMES IN THE FORM OF AQUEOUS MICROEMULSIONS
    摘要:
    一种油水微乳液,包括以下重量百分比:70%至94%的水;至少一种芳香疏水物质1%至15%;至少一种有利于挥发的溶剂表面活性剂4%至20%,其为公式(I)的单烷基甘油衍生物;至少一种阴离子表面活性剂和至少一种烷基葡糖苷作为增溶剂的0.1%至15%。因此,该微乳液可用于生产精致的香水配方或化妆品或个人卫生用品配方。
    公开号:
    US20200179247A1
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文献信息

  • Antireflection film composition, patterning process and substrate using the same
    申请人:Shinetsu Chemical Co., Ltd.
    公开号:EP1798599A1
    公开(公告)日:2007-06-20
    There is disclosed an antireflection film composition for forming an intermediate resist film of a multilayer resist film used in lithography comprising: at least a polymer obtained by reacting a chelating agent with a polymer having a repeating unit represented by the following general formula (1); an organic solvent; and an acid generator. There can be provided a novel antireflection film composition that exhibits high etch selection ratio to a photoresist film, that forms a dense inorganic film, whereby an excellent pattern can be formed on the overlying photoresist film, that can be removed with wet stripping, that exhibits high preservation stability and high dry etching resistance when an underlying layer is etched, and that is suitable for forming an intermediate resist film of a multilayer resist film; a patterning process in which an antireflection film is formed over a substrate by using the antireflection film composition; and a substrate having the antireflection film as an intermediate resist film.
    本发明公开了一种用于形成光刻技术中使用的多层光刻胶膜的中间光刻胶膜的抗反射膜组合物,该组合物包括:至少一种通过螯合剂与具有以下通式(1)所代表的重复单元的聚合物反应而得到的聚合物;一种有机溶剂;以及一种酸发生器。本发明提供了一种新型抗反射膜组合物,该组合物对光刻胶膜具有高蚀刻选择比,可形成致密的无机膜,从而可在上覆的光刻胶膜上形成极佳的图案,该组合物可通过湿法剥离去除,当底层被蚀刻时,该组合物具有高保存稳定性和高抗干蚀刻性,并且适用于形成多层抗蚀膜的中间抗蚀膜;使用该抗反射膜组合物在基底上形成抗反射膜的图案化工艺;以及具有该抗反射膜作为中间抗蚀膜的基底。
  • Silicon-containing resist underlayer film-forming composition and patterning process
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:EP2599819A1
    公开(公告)日:2013-06-05
    The present invention is a silicon-containing resist underlayer film-forming composition containing at least any one of a condensation product and a hydrolysis condensation product or both of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the following general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the following general formula (2). Thereby, there can be provided a resist underlayer film applicable not only to the resist pattern formed of a hydrophilic organic compound obtained by the negative development but also to the resist pattern formed of a hydrophobic compound obtained by the conventional positive development.         R1m0B(OH)m1(OR)(3-m0-m1)     (1)         R10m10R11m11R12m12Si(OR13)(4-m10-m11-m12)     (2)
    本发明是一种含硅的抗蚀剂底层成膜组合物,该组合物至少含有缩合产物和水解缩合产物中的任意一种或两者的混合物,该混合物包括:一种或多种选自由下通式(1)所示的有机硼化合物及其缩合产物组成的化合物(A)和一种或多种选自由下通式(2)所示的硅化合物(B)。因此,这种抗蚀剂底层薄膜不仅适用于通过负显影获得的由亲水性有机化合物形成的抗蚀剂图案,也适用于通过传统正显影获得的由疏水性化合物形成的抗蚀剂图案。 R1m0B(OH)m1(OR)(3-m0-m1) (1) R10m10R11m11R12m12Si(OR13)(4-m10-m11-m12) (2)
  • Perfumes in the form of aqueous microemulsions
    申请人:CHANEL PARFUMS BEAUTE
    公开号:US11052025B2
    公开(公告)日:2021-07-06
    Disclosed is a microemulsion of oil-in-water type including, preferably consisting of, by weight relative to the total weight of microemulsion: •70% to 94% of water, •1% to 15% of at least one hydrophobic fragrancing substance, •4% to 20% of at least one preferably volatile solvo-surfactant, and •0.1% to 15%, preferably 1% to 13%, of at least one hydrotropic agent or at least one surfactant selected from anionic surfactants, cationic surfactants, amphoteric surfactants and non-ionic surfactants. The solvo-surfactant is selected from monoalkylated glycerol derivatives of following formula (I): wherein the “alkyl” group is a linear or branched alkyl group including from 1 to 8 carbon atoms, and R and R′ are each independently H or a linear or branched alkyl group including from 1 to 5 carbon atoms, with the proviso that R is different from R′, and mixtures thereof.
    本发明公开了一种水包油型微乳液,按相对于微乳液总重量的重量计,该微乳液包括,优选由以下成分组成:-70%至 94%的水、-1%至 15%的至少一种疏水性芳香物质、-4%至 20%的至少一种优选挥发性溶剂表面活性剂,以及-0.1%至 15%,优选 1%至 13%的至少一种亲水剂或至少一种选自阴离子表面活性剂、阳离子表面活性剂、两性表面活性剂和非离子表面活性剂的表面活性剂。溶解表面活性剂选自下式 (I) 的单烷基化甘油衍生物: 其中 "烷基 "是包括 1 至 8 个碳原子的直链或支链烷基,R 和 R′各自独立地为 H 或包括 1 至 5 个碳原子的直链或支链烷基,但 R 与 R′不同,以及它们的混合物。
  • Rogers; Henze, Journal of the American Chemical Society, 1940, vol. 62, p. 1759
    作者:Rogers、Henze
    DOI:——
    日期:——
  • Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:EP2628745B1
    公开(公告)日:2015-03-25
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