The present invention is a silicon-containing resist underlayer film-forming composition containing at least any one of a condensation product and a hydrolysis condensation product or both of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the following general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the following general formula (2). Thereby, there can be provided a resist underlayer film applicable not only to the resist pattern formed of a hydrophilic organic compound obtained by the negative development but also to the resist pattern formed of a hydrophobic compound obtained by the conventional positive development.
R1m0B(OH)m1(OR)(3-m0-m1) (1)
R10m10R11m11R12m12Si(OR13)(4-m10-m11-m12) (2)
本发明是一种含
硅的抗蚀剂底层成膜组合物,该组合物至少含有缩合产物和
水解缩合产物中的任意一种或两者的混合物,该混合物包括:一种或多种选自由下通式(1)所示的有机
硼化合物及其缩合产物组成的化合物(A)和一种或多种选自由下通式(2)所示的
硅化合物(B)。因此,这种抗蚀剂底层薄膜不仅适用于通过负显影获得的由亲
水性有机化合物形成的抗蚀剂图案,也适用于通过传统正显影获得的由疏
水性化合物形成的抗蚀剂图案。
R1m0B(OH)m1(OR)(3-m0-m1) (1)
R10m10R11m11R12m12Si(OR13)(4-m10-m11-m12) (2)