(E)-Hex-3-ene-3-sulfonic acid | 44871-81-0

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: (E)-Hex-3-ene-3-sulfonic acid
• 英文别名: (E)-hex-3-ene-3-sulfonic acid
• CAS: 44871-81-0
• 化学式: C₆H₁₂O₃S
• 分子量: 164.225
• InChiKey: NRXUQIQORVVVLW-AATRIKPKSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.1
• 重原子数：
  10
• 可旋转键数：
  3
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.67
• 拓扑面积：
  62.8
• 氢给体数：
  1
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  硫酸丙酯 在 氢氧化钾 作用下， 以 四氯化碳 、 叔丁醇 为溶剂， 生成 (E)-Hex-3-ene-3-sulfonic acid
  参考文献：
  名称：

  烯烃磺酸和氯化物的合成。砜氯化-与CCl 4 -KOH进行的ramberg-bäcklund反应

  摘要：

  DOI：

  10.1016/s0040-4039(01)94305-9

文献信息

• COMPOSITION FOR RESIST UNDERLAYER FILM, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND FULLERENE DERIVATIVE
  申请人：WATANABE Takeru

  公开号：US20120045900A1

  公开（公告）日：2012-02-23

  The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.
• US9076738B2
  申请人：——

  公开号：US9076738B2

  公开（公告）日：2015-07-07
• Synthesis of alkenesulfonic acids and chlorides. sulfone chlorination - ramberg-bäcklund reactions with CCl4-KOH
  作者：Cal Y. Mcyers、Laurence L. Ho

  DOI：10.1016/s0040-4039(01)94305-9

  日期：1972.1