摩熵化学
数据库官网
小程序
打开微信扫一扫
首页 分子通 化学资讯 化学百科 反应查询 关于我们
请输入关键词

苯乙酸,2-溴-4-羟基- | 94138-91-7

中文名称
苯乙酸,2-溴-4-羟基-
中文别名
(9Z,12Z,15Z)-9,12,15-十八碳三烯酸锂
英文名称
Lithium (9Z,12Z,15Z)-9,12,15-octadecatrienoate
英文别名
lithium;(9Z,12Z,15Z)-octadeca-9,12,15-trienoate
苯乙酸,2-溴-4-羟基-化学式
CAS
94138-91-7
化学式
C18H29LiO2
mdl
——
分子量
284.4
InChiKey
DYWHQKKVLYASPF-IFNWOZJISA-M
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.33
  • 重原子数:
    21
  • 可旋转键数:
    12
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.61
  • 拓扑面积:
    40.1
  • 氢给体数:
    0
  • 氢受体数:
    2

文献信息

  • Crystalline polyolefin composition
    申请人:Chisso Corporation
    公开号:EP0416321A1
    公开(公告)日:1991-03-13
    A crystalline polyolefin composition which provides molded articles having improved stiffness characteristics is disclosed, comprising 100 parts by weight of a crystalline polyolefin, (A) from 0.001 to 1 part by weight of a fluorophosphite compound represented by formula (I): wherein R represents an alkylidene group having from 1 to 4 carbon atoms or a sulfur atom; Ar1 and Ar2, which may be the same or different, each represents an alkylarylene group or a cycloalkylarylene group; and n represents 0 or 1, and (B) from 0.001 to 1 part by weight of at least one compound selected from the group consisting of (1) an aliphatic monocarboxylic acid salt with lithium or sodium, (2) a dithiocarbamic acid salt with lithium, sodium or potassium, (3) a 2-mercaptobenzothiazole salt with lithium, sodium or potassium, (4) a 2-mercaptobenzimidazole salt with lithium, sodium or potassium and (5) a benzotriazole salt with lithium, sodium or potassium. A crystalline polyolefin composition which provides molded articles having improved stiffness charateristics is also disclosed, comprising 100 parts by weight of a crystalline polyolefin, (A) from 0.001 to 1 part by weight of a fluorophosphite compound represented by formula (I) shown above, (B ) from 0.001 to 1 part by weight of at least one compound selected from the group consisting of (1) an aliphatic monocarboxylic acid salt with potassium, strontium or barium, (2) a hydroxy-higher fatty acid salt with potassium, strontium or barium, (3) an aliphatic polycarboxylic acid salt with lithium, sodium, potassium, strontium or barium, (4) a salt of an aliphatic hydroxy acid having form 2 to 6 carbon atoms with lithium, sodium, potassium, magnesium, strontium or barium, (5) an aromatic carboxylic acid salt with lithium, sodium, strontium, barium or aluminum, (6) a glutamic acid salt with lithium, sodium, potassium, strontium or barium, (7) an aliphatic phosphoric acid salt with sodium, potassium, calcium, strontium or barium, (8) a lithium, sodium, potassium or barium salt of a cyclic phosphorus compound represented by formula (II): wherein Ar3 and Ar4, which may be the same or different, each represents an arylene group, an alkylarylene group, a cycloalkylarylene group, an arylarylene group or an aralkylarylene group; M represents lithium, sodium, potassium or barium; and m represents an atomic valence of M, (9) magnesium or aluminum hydroxide, (10) magnesium oxide, (11) magnesium or calcium carbonate and (12) hydrotalcite, and (C) from 0.01 to 1 part by weight of an aliphatic amine.
    本发明公开了一种结晶聚烯烃组合物,该组合物可提供具有改进的刚度特性的模塑制品,该组合物包括按重量计100份的结晶聚烯烃、(A)按重量计0.001至1份的由式(I)代表的亚磷酸氟化合物: 其中 R 代表具有 1 至 4 个碳原子的亚烷基或硫原子;Ar1 和 Ar2 可以相同或不同,各自代表烷基芳基或环烷基芳基;n 代表 0 或 1,以及 (B) 0.(1) 锂或钠的脂肪族一羧酸盐,(2) 锂、钠或钾的二硫代氨基甲酸盐、(3) 锂、钠或钾的 2-巯基苯并噻唑盐, (4) 锂、钠或钾的 2-巯基苯并咪唑盐, (5) 锂、钠或钾的苯并三唑盐。 本发明还公开了一种结晶聚烯烃组合物,该组合物可提供具有改进的刚度特性的模塑制品,其成分包括 100 份(重量)结晶聚烯烃、(A) 0.001 至 1 份(重量)由上文式(I)代表的亚磷酸氟化合物、(B ) 0.(1)钾、锶或钡的脂肪族一羧酸盐;(2)钾、锶或钡的羟基高级脂肪酸盐;(3)锂、钠、钾、锶或钡的脂肪族多羧酸盐;(4)锂、钠、钾、镁、锶或钡的具有 2 至 6 个碳原子的脂肪族羟基酸盐、(5) 锂、钠、锶、钡或铝的芳香族羧酸盐; (6) 锂、钠、钾、锶或钡的谷氨酸盐、(7) 含有钠、钾、钙、锶或钡的脂肪族磷酸盐, (8) 由式(II)代表的环磷化合物的锂、钠、钾或钡盐: 其中 Ar3 和 Ar4 可以相同或不同,各自代表芳基、烷芳基、环烷芳基、芳基芳基或芳基芳基;M 代表锂、钠、钾或钡;m 代表 M 的原子价,(9) 氢氧化镁或铝,(10) 氧化镁,(11) 碳酸镁或碳酸钙和 (12) 水滑石,以及 (C) 0.01至1份重量的脂肪族胺。
  • Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
    申请人:Shinetsu Chemical Co., Ltd.
    公开号:EP1845132A2
    公开(公告)日:2007-10-17
    A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.
    含硅薄膜由一种热固化组合物形成,该组合物包括:(A) 一种含硅化合物,该化合物是通过在酸催化剂存在下使一种可水解的硅化合物发生水解缩合,并从反应混合物中基本除去酸催化剂而获得;(B) 锂、钠、钾、铷或铯的氢氧化物或有机酸盐,或一种锍、碘或铵化合物;(C) 一种有机酸;以及 (D) 一种有机溶剂。含硅薄膜可以有效地将上覆的光刻胶薄膜图案化。该组合物能有效地减少光刻后图案缺陷的出现,并具有货架稳定性。
  • Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:EP2063319A1
    公开(公告)日:2009-05-27
    A metal oxide-containing film is formed from a heat curable composition comprising (A) a metal oxide-containing compound obtained through hydrolytic condensation between a hydrolyzable silicon compound and a hydrolyzable metal compound, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Cs, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The metal oxide-containing film ensures effective pattern formation.
    一种含金属氧化物的薄膜由一种热固化组合物形成,该组合物包括:(A) 通过可水解硅化合物和可水解金属化合物之间的水解缩合获得的含金属氧化物化合物;(B) Li、Na、K、Rb 或 Cs 的氢氧化物或有机酸盐,或锍、碘或铵化合物;(C) 有机酸;以及 (D) 有机溶剂。含金属氧化物的薄膜可确保有效的图案形成。
  • Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:EP2172807A1
    公开(公告)日:2010-04-07
    There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern.
    本发明公开了一种用于形成含硅薄膜的热固性组合物,该组合物用于形成在光刻中使用的多层抗蚀剂工艺中形成的含硅薄膜,至少包括(A)通过使用酸作为催化剂水解和缩合可水解硅化合物而获得的含硅化合物,(B)热交联促进剂,(C)具有 1 至 30 个碳原子的一价或二价或更多有机酸,(D)三价或更多醇,以及(E)有机溶剂。本发明可以提供一种含硅薄膜的组合物,该组合物可以在光刻胶膜中形成良好的图案,可以形成用于蚀刻掩膜的含硅薄膜,该薄膜具有良好的耐干蚀刻性,可以提供良好的储存稳定性,并且可以用用于光刻的多层抗蚀剂工艺中的分层工艺中使用的溶液进行分层,还可以提供一种在其上形成含硅薄膜的基底,以及进一步提供一种形成图案的方法。
  • Patterning process and composition for forming silicon-containing film usable therefor
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:EP2500775A2
    公开(公告)日:2012-09-19
    The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of:using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.
    本发明提供了一种通过光刻法形成底片图案的制图工艺,至少包括以下步骤:使用含有特定含硅化合物(A)和有机溶剂(B)的用于形成含硅薄膜的组合物形成含硅薄膜;使用无硅抗蚀剂组合物在含硅薄膜上形成光刻胶膜;对光刻胶膜进行热处理,然后将光刻胶膜暴露于高能光束;以及使用含有有机溶剂的显影剂溶解光刻胶膜的未暴露区域,从而获得负图案。可以有一种图案化工艺,它是通过采用基于有机溶剂的显影来形成阴性抗蚀剂的最佳图案化工艺,以及在该工艺中使用的用于形成含硅薄膜的组合物。
查看更多