申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP2813891A2
公开(公告)日:2014-12-17
In lithography, a composition comprising a novolak resin comprising recurring units of hydroxycoumarin is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO2 substrates.
在光刻技术中,一种由包含羟基香豆素递归单元的酚醛树脂组成的组合物可用于形成光刻胶底层膜。该底层膜可在碱水中剥离,而不会对离子注入硅基底或二氧化硅基底造成损坏。