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4-[(2-Methoxyethyl)amino]-4-oxobutanoic acid

中文名称
——
中文别名
——
英文名称
4-[(2-Methoxyethyl)amino]-4-oxobutanoic acid
英文别名
4-(2-methoxyethylamino)-4-oxobutanoic acid
4-[(2-Methoxyethyl)amino]-4-oxobutanoic acid化学式
CAS
——
化学式
C7H13NO4
mdl
——
分子量
175.18
InChiKey
IANPGQRDJAPFGL-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    -1.2
  • 重原子数:
    12
  • 可旋转键数:
    6
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.71
  • 拓扑面积:
    75.6
  • 氢给体数:
    2
  • 氢受体数:
    4

文献信息

  • BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION
    申请人:MATSUTANI Hiroshi
    公开号:US20110313122A1
    公开(公告)日:2011-12-22
    Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8 C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10 −8 A/cm 2 .
    存储器电容单元中提供的绝缘膜(绝缘膜)是在片1上形成的栅极3和对电极8C之间形成的。绝缘膜5,7包括一种基于氮烷的树脂,其介电常数不大于2.6,杨氏模量为5 GPa或更大,泄漏电流不大于1×10^-8A/cm2。
  • Preparation of Polymer Conjugates of Therapeutic, Agricultural, and Food Additive Compounds
    申请人:Konradi W. Andrei
    公开号:US20080031848A1
    公开(公告)日:2008-02-07
    This invention provides an improved synthesis of polymer conjugates of formula (I), of agricultural, therapeutic, and food additive compounds. In particular, a process is described for the preparation of conjugates by treating primary or secondary alcohol substituents of active compounds with polymeric nucleophiles using “Mitsunobu” or related reaction conditions.
  • Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation
    申请人:MATSUTANI Hiroshi
    公开号:US20090240017A1
    公开(公告)日:2009-09-24
    Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8 C formed on a silicon wafer 1 . The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10 −8 A/cm 2 .
  • US7625642B2
    申请人:——
    公开号:US7625642B2
    公开(公告)日:2009-12-01
  • US8362199B2
    申请人:——
    公开号:US8362199B2
    公开(公告)日:2013-01-29
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