1,4-phenylenemethylene bis-S,S'-(tetrahydrothiophen-1-ium) | 52547-08-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 1,4-phenylenemethylene bis-S,S'-(tetrahydrothiophen-1-ium)
• 英文别名: 1-[[4-(Tetrahydrothiophen-1-ium-1-ylmethyl)phenyl]methyl]tetrahydrothiophen-1-ium；1-[[4-(thiolan-1-ium-1-ylmethyl)phenyl]methyl]thiolan-1-ium
• CAS: 52547-08-7
• 化学式: C₁₆H₂₄S₂
• 分子量: 280.499
• InChiKey: WMQVVIMZECUMEN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.8
• 重原子数：
  18
• 可旋转键数：
  4
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.62
• 拓扑面积：
  2
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  1-辛硫醇 、 1,4-phenylenemethylene bis-S,S'-(tetrahydrothiophen-1-ium) 在 sodium t-butanolate 作用下， 以 甲醇 为溶剂， 生成
  参考文献：
  名称：

  Kinetic and Mechanistic Study on p-Quinodimethane Formation in the Sulfinyl Precursor Route for the Polymerization of Poly(p-phenylenevinylene) (PPV)

  摘要：

  The kinetics of p-quinodimethane formation in the sulfinyl precursor route for the poly(p-phenylenevinylene) (PPV) polymerization was studied using stop-flow UV-vis spectroscopy and theoretical first principle calculations. Different sulfinyl monomers were studied by means of quantitative kinetic experiments regarding the p-quinodimethane formation in 2-butanol. The influence of the solvent, the nature of the aromatic moiety, and the substituents on the phenyl core was analyzed by means of qualitative experiments. Quantitative measurements, using pseudo-first-order reaction conditions, were performed in order to assess the effect of the polarizer and the leaving group on the reaction rates. To obtain additional fundamental insight into the pathway leading to p-quinodimethane formation, density functional theory calculations were performed and subsequent reaction rate coefficients were determined from a theoretical point of view, enabling a profound comparison with experiment. From all these data, an E-2 mechanism is proposed for the p-quinodimethane formation in the sulfinyl precursor route.

  DOI：

  10.1021/ma1013012

文献信息

• SWITCHABLE ANTIFOULING COATINGS AND USES THEREOF
  申请人：SANDIA CORPORATION

  公开号：US20170226350A1

  公开（公告）日：2017-08-10

  The present invention relates to antifouling coatings capable of being switched by using heat or ultraviolet light. Prior to switching, the coating includes an onium cation component having antimicrobial and antibacterial properties. Upon switching, the coating is converted to a conjugated polymer state, and the cationic component is released with any adsorbed biofilm layer. Thus, the coatings herein have switchable and releasable properties. Methods of making and using such coatings are also described.

  本发明涉及能够通过热或紫外光进行切换的防污涂层。在切换之前，涂层包括具有抗菌和抗细菌特性的离子阳离子组分。在切换后，涂层被转化为共轭聚合物状态，并且阳离子组分与任何吸附的生物膜层一起释放。因此，本文所述的涂层具有可切换和可释放的特性。还描述了制备和使用这种涂层的方法。
• Polyazacrown-based materials for mercury capture and synthesis of those materials
  申请人：Redko Mikhail Y.

  公开号：US20090057233A1

  公开（公告）日：2009-03-05

  Polyazacrown polymers based on the azacrown monomer 1,4,7,10,13,16,21,24-octaazabicyclo[8.8.8]hexacosane (“H 6 Aza222”) are disclosed. Azacrown monomer units are preferably linked with a suitable linking agent, and the resulting polymers are can absorb mercury from a water stream and form a stable complex therewith. Methods of making and using the polyazacrown polymers are also disclosed. The polymers have a high absorption capacity for and selectivity towards mercury, which properties are useful for the remediation of mercury-contaminated water. The polymers can be regenerated by the efficient removal of the absorbed mercury. Further, the absorbed mercury that is liberated from the polyazacrown polymers can be effectively concentrated and captured to prevent its re-release into the environment.
• COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE
  申请人：LEE Wai Mun

  公开号：US20120083436A1

  公开（公告）日：2012-04-05

  The present invention is directed to compositions and method of use for treating semiconductor substrate comprising a sulfonium compound and a nucleophilic amine in the fabrication of electronic devices. Optionally, the said composition further comprises a chelating agent, and solvent. The pH of the said solution can be adjusted with the addition of acid or base. The semiconductor manufacturing processes include steps for post etch residue, photoresist removal and steps during chemical mechanical planarization and post chemical mechanical planarization.
• US7968673B2
  申请人：——

  公开号：US7968673B2

  公开（公告）日：2011-06-28
• US8173584B2
  申请人：——

  公开号：US8173584B2

  公开（公告）日：2012-05-08

表征谱图