2-(Benzotriazol-1-yl)butanedioic acid | 64598-03-4

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 2-(Benzotriazol-1-yl)butanedioic acid
• CAS: 64598-03-4
• 化学式: C₁₀H₉N₃O₄
• 分子量: 235.2
• InChiKey: JNXJYDMXAJDPRV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.8
• 重原子数：
  17
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.2
• 拓扑面积：
  105
• 氢给体数：
  2
• 氢受体数：
  6

文献信息

• Process for chemical mechanical polishing of semiconductor substrate and aqueous dispersion for chemical mechanical polishing
  申请人：JSR Corporation

  公开号：EP1333476A2

  公开（公告）日：2003-08-06

  The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process. The process for chemical mechanical polishing of a semiconductor substrate of the present invention is that a surface to be polished of the semiconductor substrate is polished under conditions of a rotation speed of a polishing table fixing a polishing pad at the range from 50 to 200 rpm and a pressing pressure of the semiconductor substrate fixed to a polishing head against a polishing pad at the range from 700 to 18,000Pa, by using an aqueous dispersion for chemical mechanical polishing comprising an abrasive and at least one compound selected from the group consisting of polycarboxylic acid having a heterocycle and anhydride thereof, and the polishing pad.

  本发明的目的是提供一种半导体基片化学机械抛光工艺，该工艺特别适用于对具有布线图案的晶片进行化学机械抛光，以及在生产半导体器件的过程中在布线图案、多层布线情况下的夹层等之间形成具有低介电常数的绝缘层，以及在该工艺中使用的化学机械抛光用水分散液。本发明的半导体基片化学机械抛光工艺是，在固定抛光垫的抛光台的转速为 50 至 200 rpm，以及固定在抛光头上的半导体基片对抛光垫的压力为 700 至 18、000Pa 的范围内，使用由磨料和至少一种选自具有杂环的聚羧酸及其酸酐组成的化合物的化学机械抛光用水分散液以及抛光垫。
• Polishing composition
  申请人：FUJIMI INCORPORATED

  公开号：EP1520892A2

  公开（公告）日：2005-04-06

  A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. This polishing composition is capable of suppressing the occurrence of the dishing.

  本发明的一种抛光组合物用于半导体器件中形成布线的抛光，包括：特定的表面活性剂；氧化硅；从羧酸和α-氨基酸组成的组中选出的至少一种；腐蚀抑制剂；氧化剂；以及水。这种抛光组合物能够抑制分层现象的发生。
• Polishing composition and polishing method
  申请人：FUJIMI INCORPORATED

  公开号：EP1577357A1

  公开（公告）日：2005-09-21

  A polishing composition includes an abrasive, phosphoric acid, and an oxidizing agent and has a pH of 6 or less. The polishing composition has the capability for polishing an alloy containing nickel and iron with a high stock removal rate. Accordingly, the polishing composition is preferably used in an application for polishing an object including the alloy containing nickel and iron.

  一种抛光组合物包括研磨剂、磷酸和氧化剂，pH 值在 6 或以下。该抛光组合物能够以较高的去除率对含镍和铁的合金进行抛光。因此，抛光组合物最好用于抛光包括含镍和铁的合金在内的物体。
• Polishing composition and process for producing wiring structure using it
  申请人：FUJIMI INCORPORATED

  公开号：EP1640424A1

  公开（公告）日：2006-03-29

  A polishing composition comprising the following components (a) to (e): (a) silicon dioxide, (b) an alkaline compound, (c) an anticorrosive, (d) a water soluble polymer compound, and (e) water.

  一种抛光组合物，包括以下成分(a)至(e)： (a) 二氧化硅 (b) 鹼性化合物 (c) 一种防腐剂 (d) 一种水溶性聚合物化合物，和 (e) 水。
• POLISHING COMPOSITION AND POLISHING METHOD
  申请人：FUJIMI INCORPORATED

  公开号：EP1670047A1

  公开（公告）日：2006-06-14

  A first polishing composition is used in chemical mechanical polishing for removing one part of the portion of a conductive layer (15) positioned outside a trench (13). A second polishing composition is used in chemical mechanical polishing for removing the remaining part of the portion of a conductive layer positioned outside the trench and the portion of a barrier layer (14) positioned outside the trench. The first polishing composition contains a specific surfactant, a silicon oxide, a carboxylic acid, an anticorrosive, an oxidizing agent, and water. The second polishing composition contains colloidal silica, an acid, an anticorrosive, and a completely saponified polyvinyl alcohol.

  第一种抛光组合物用于化学机械抛光，以去除位于沟槽 (13) 外侧的导电层 (15) 的一部分。 第二种抛光组合物用于化学机械抛光，以去除位于沟槽外的导电层部分的剩余部分和位于沟槽外的阻挡层 (14) 部分。 第一种抛光组合物含有特定的表面活性剂、氧化硅、羧酸、防腐剂、氧化剂和水。 第二种抛光组合物含有胶体二氧化硅、酸、防腐剂和完全皂化的聚乙烯醇。