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N,N,N-三甲基甲铵丙烯酸盐 | 16431-85-9

中文名称
N,N,N-三甲基甲铵丙烯酸盐
中文别名
——
英文名称
Methanaminium, N,N,N-trimethyl-, 2-propenoate
英文别名
prop-2-enoate;tetramethylazanium
N,N,N-三甲基甲铵丙烯酸盐化学式
CAS
16431-85-9
化学式
C7H15NO2
mdl
——
分子量
145.2
InChiKey
UBUNGTDUKIRAGR-UHFFFAOYSA-M
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    -0.76
  • 重原子数:
    10
  • 可旋转键数:
    0
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.57
  • 拓扑面积:
    40.1
  • 氢给体数:
    0
  • 氢受体数:
    2

文献信息

  • Cleaning agent for semiconductor device and method for manufacturing semiconductor device
    申请人:MITSUBISHI GAS CHEMICAL COMPANY, INC.
    公开号:EP0662705A2
    公开(公告)日:1995-07-12
    There are disclosed a method of manufacturing a semiconductor device by forming a mask with a photoresist on a conductive layer formed on a semiconductor substrate and then forming a wiring structure by dryetching which method comprises a cleaning step of peeling a protecting deposition film formed on side walls of the conductive layer and the photoresist by using a cleaning agent for a semiconductor device comprising an aqueous solution containing a specific quaternary ammonium salt and a fluoro-compound; and a cleaning agent for a semiconductor device which comprises a specific quaternary ammonium salt and a fluoro-compound, and optionally an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. The use of the above cleaning agent in the method of manufacturing a semiconductor device can peel out the protecting deposition film with extreme certainty, whereby the surface of the conductive layer is decontaminated to high cleanness and corrosion problem is eliminated.
    本发明公开了一种通过在半导体衬底上形成的导电层上用光致抗蚀剂形成掩膜,然后通过干蚀刻形成布线结构来制造半导体器件的方法,该方法包括一个清洁步骤,即使用一种半导体器件用清洁剂剥离在导电层和光致抗蚀剂侧壁上形成的保护沉积膜,该清洁剂包括一种含有特定季盐和化合物的溶液;和一种用于半导体器件的清洗剂,该清洗剂包括一种特定的季盐和一种化合物,以及一种可选的有机溶剂,该有机溶剂选自由酰胺类、内酯类、腈类、醇类酯类组成的组。在半导体设备的制造方法中使用上述清洁剂,可以非常准确地剥离保护沉积膜,从而使导电层表面得到高度清洁的净化,消除腐蚀问题。
  • Cleaning liquid for producing semiconductor device and process for producing semiconductor device using same
    申请人:MITSUBISHI GAS CHEMICAL COMPANY, INC.
    公开号:EP0827188A2
    公开(公告)日:1998-03-04
    There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.
    本发明公开了一种用于生产半导体器件的清洗液,其包括(A)含化合物;(B)溶性或混溶性有机溶剂;以及(C)无机酸和/或有机酸,可选地,还包括(D)季盐或(D')特定有机羧酸盐和/或有机羧酸胺盐;以及一种半导体器件的生产工艺,在表面装有绝缘膜层或属导电层的基片上形成抗蚀图案,通过干法蚀刻形成通孔或电线,通过氧等离子体灰化处理去除抗蚀图案,并用上述清洗液进行清洗处理。上述清洗液和生产工艺可轻松去除干法蚀刻时形成的沉积聚合物,而不会损害属膜和绝缘膜。
  • New trimerization catalysts from sterically hindered salts
    申请人:Air Products and Chemicals, Inc.
    公开号:EP1852448A2
    公开(公告)日:2007-11-07
    The present invention provides trimerization catalyst compositions having a sterically hindered carboxylate salt and methods to produce a polyisocyanurate/polyurethane foam using such trimerization catalyst compositions.
    本发明提供了具有立体受阻羧酸盐的三聚催化剂组合物,以及使用此类三聚催化剂组合物生产聚异氰酸酯/聚酯泡沫的方法。
  • New trimer catalyst with improved processability and surface cure
    申请人:Air Products and Chemicals, Inc.
    公开号:EP1852449A2
    公开(公告)日:2007-11-07
    The present invention provides trimerization catalyst compositions having an α,β-unsaturated carboxylate salt and methods to produce a polyisocyanurate/polyurethane foam using such trimerization catalyst compositions.
    本发明提供了具有α,β-不饱和羧酸盐的三聚催化剂组合物,以及使用这种三聚催化剂组合物生产聚异氰酸酯/聚酯泡沫的方法。
  • New trimer catalyst additives for improving foam processability
    申请人:Air Products and Chemicals, Inc.
    公开号:EP1852450A2
    公开(公告)日:2007-11-07
    The present invention provides trimerization catalyst compositions and methods to produce a polyisocyanurate/polyurethane foam using such trimerization catalyst compositions. The catalyst composition is the contact product of at least one α,β-unsaturated carboxylate salt and at least one second carboxylate salt.
    本发明提供了三聚催化剂组合物和使用这种三聚催化剂组合物生产聚异氰酸酯/聚酯泡沫塑料的方法。催化剂组合物是至少一种α,β-不饱和羧酸盐和至少一种第二羧酸盐的接触产物。
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