2-methyl-N,N-dipropylpentanamide

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: 2-methyl-N,N-dipropylpentanamide
• 化学式: C₁₂H₂₅NO
• 分子量: 199.33
• InChiKey: SRZYWDJIMDDDNP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.5
• 重原子数：
  14
• 可旋转键数：
  7
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.92
• 拓扑面积：
  20.3
• 氢给体数：
  0
• 氢受体数：
  1

文献信息

• [EN] SUBSTITUTED PYRROLOPYRIDINES AS INHIBITORS OF ACTIVIN RECEPTOR-LIKE KINASE<br/>[FR] PYRROLOPYRIDINES SUBSTITUÉES UTILISÉES EN TANT QU'INHIBITEURS DE LA KINASE APPARENTÉE AU RÉCEPTEUR DE L'ACTIVINE
  申请人：BLUEPRINT MEDICINES CORP

  公开号：WO2019079649A1

  公开（公告）日：2019-04-25

  Described herein are compounds that inhibit ALK2 and its mutants, pharmaceutical compositions including such compounds, and methods of using such compounds and compositions.

  本文描述了抑制ALK2及其突变体的化合物，包括这些化合物的药物组合物，以及使用这些化合物和组合物的方法。
• Method of producing polyimide resin, method of producing polyimide coating, method of producing polyamic acid solution, polyimide coating, and polyamic acid solution
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：EP2907838A1

  公开（公告）日：2015-08-19

  Provided is a method of producing a polyimide resin that produces a polyimide resin excellent in heat resistance and mechanical properties and having a low dielectric constant even when heat-treated at a lower temperature. The method of producing a polyimide resin according to the present invention includes heating at from 120°C to 350°C a polyamic acid resulting from the reaction of a tetracarboxylic acid dianhydride component and a diamine component in a solvent comprising at least a compound (A) represented by the general formula (1), in which R1 represents a hydrogen atom or a hydroxyl group, R2 and R3 independently represent a hydrogen atom or a C1 to C3 alkyl group, and R4 and R5 independently represent a C1 to C3 alkyl group.

  本发明提供了一种生产聚酰亚胺树脂的方法，该方法可生产出耐热性和机械性能优异的聚酰亚胺树脂，即使在较低温度下进行热处理，其介电常数也很低。根据本发明生产聚酰亚胺树脂的方法包括在 120°C 至 350°C 的温度下加热由四羧酸二酐组分和二胺组分在溶剂中反应生成的聚酰胺，该溶剂至少包含通式（1）代表的化合物（A），其中 R1 代表氢原子或羟基，R2 和 R3 独立地代表氢原子或 C1 至 C3 烷基，R4 和 R5 独立地代表 C1 至 C3 烷基。
• METHOD OF PRODUCING POLYIMIDE RESIN, METHOD OF PRODUCING POLYIMIDE COATING, METHOD OF PRODUCING POLYAMIC ACID SOLUTION, POLYIMIDE COATING, AND POLYAMIC ACID SOLUTION
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：US20150232619A1

  公开（公告）日：2015-08-20

  A method of producing a polyimide resin that produces a polyimide resin having excellent heat resistance and mechanical properties, and having a low dielectric constant even when heat-treated at a lower temperature. The method includes heating at 120° C. to 350° C. a polyamic acid resulting from the reaction of a tetracarboxylic acid dianhydride component and a diamine component in a solvent including at least a compound represented by the general formula (1), in which R 1 represents a hydrogen atom or a hydroxyl group, R 2 and R 3 independently represent a hydrogen atom or a C 1 to C 3 alkyl group, and R 4 and R 5 independently represent a C 1 to C 3 alkyl group.
• RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING AMIDE SOLVENT
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20190354018A1

  公开（公告）日：2019-11-21

  A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R 1 , R 2 , and R 3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R 1 , R 2 , and R 3 may be the same or different and may bond to each other to form a ring structure.
• RESIST UNDERLYING FILM FORMING COMPOSITION
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20200209753A1

  公开（公告）日：2020-07-02

  A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.