Ethane-1,2-diyl bis(carbamoylcarbamate) | 88795-45-3

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: Ethane-1,2-diyl bis(carbamoylcarbamate)
• 英文别名: 2-(carbamoylcarbamoyloxy)ethyl N-carbamoylcarbamate
• CAS: 88795-45-3
• 化学式: C₆H₁₀N₄O₆
• 分子量: 234.17
• InChiKey: RXJORXRSKQNLRZ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.8
• 重原子数：
  16
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  163
• 氢给体数：
  4
• 氢受体数：
  6

文献信息

• MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE
  申请人：Kon Junichi

  公开号：US20110081615A1

  公开（公告）日：2011-04-07

  A material for forming a resist sensitization film contains a metal salt, a resin and, a solvent. A method for producing a semiconductor device contains applying such material (or a resist) onto a processing surface so as to form a resist sensitization film or a resist film, applying a resist (or the aforementioned material) onto the resist sensitization film so as to form a resist film (or a resist sensitization film); exposing the resist film (or the resist film and the resist sensitization film) to exposure light, and developing the exposed resist film (or the exposed resist film and resist sensitization film) so as to form a resist pattern; and etching the processing surface using the resist pattern as a mask so as to pattern the processing surface.