5-Methyl-pyrazine-2-carboxylic acid (1H-tetrazol-5-yl)-amide | 111885-14-4

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 二嗪类
• 英文名称: 5-Methyl-pyrazine-2-carboxylic acid (1H-tetrazol-5-yl)-amide
• 英文别名: 5-methyl-N-(2H-tetrazol-5-yl)pyrazine-2-carboxamide
• CAS: 111885-14-4
• 化学式: C₇H₇N₇O
• mdl: MFCD02678713
• 分子量: 205.179
• InChiKey: UFRVVLAWGLMXSD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.8
• 重原子数：
  15
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.142
• 拓扑面积：
  109
• 氢给体数：
  2
• 氢受体数：
  6

反应信息

• 作为产物：
  描述：

  5-甲基吡嗪-2-羧酸 、 一水5-氨基-1H-四氮唑 在 氯甲酸乙酯 、 三乙胺 作用下， 生成 5-Methyl-pyrazine-2-carboxylic acid (1H-tetrazol-5-yl)-amide
  参考文献：
  名称：

  抗过敏药的研究。I.新型吡嗪衍生物的合成和抗过敏活性。

  摘要：

  合成了各种吡嗪衍生物，并检查了它们的抗过敏活性。带有5-四唑基的化合物对过敏性组胺释放的抑制活性比相应的羧基衍生物更有效。在吡嗪环和5-四唑基之间作为间隔基引入-CONH-或-NHCO-大大提高了活性。N-（1H-替硝唑-5-基）-2-吡嗪甲酰胺（I-3）估计显示出与色甘酸二钠（DSCG）几乎相同的效价。研究了通过将一些取代基引入I-3的吡嗪环的3位，5位或6位而修饰的各种衍生物之间的构效关系。当取代基如甲基，氯，甲氧基，在3-或5-位引入甲基氨基和二甲基氨基。相反，具有各种烷基氨基的6-取代或多或少地增加了活性。其中，6-二甲基氨基（I-17c）和6-（1-吡咯烷基）（I-34）衍生物被证明是最有效的。测定I-17c和I-34的IC 50值（对变应性组胺释放产生50％抑制的浓度）分别为4.7×10（-10）和4.6×10（-10）M。这两种化合物不仅通过静脉内途径（两种化合物的ED50 =

  DOI：

  10.1248/cpb.38.201

文献信息

• Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates
  申请人：BASF SE

  公开号：US10899945B2

  公开（公告）日：2021-01-26

  Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

  一种化学机械抛光(CMP)组合物(Q)，用于对包含(i)钴和/或(ii)钴合金和(iii)Ti N和/或TaN的基体(S)进行化学机械抛光，其中所述CMP组合物(Q)包含 (E) 无机颗粒 (F) 至少一种包含氨基和酸基(Y)的有机化合物，其中所述化合物包含n个氨基和至少n+1个酸性质子，其中n为整数≥1。(G) 至少一种氧化剂，其用量为 0.2 至 2.5 wt.- %，以混合物总重量为基准。(H) 一种水介质，其中 CMP 组合物 (Q) 的 pH 值大于 6 但小于 9。
• USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES
  申请人：BASF SE

  公开号：EP3334794B1

  公开（公告）日：2020-02-19
• CHEMICAL MECHANICAL POLISHING COMPOSITION
  申请人：BASF SE

  公开号：EP3714012A1

  公开（公告）日：2020-09-30
• [EN] USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES<br/>[FR] UTILISATION D'UNE COMPOSITION DE POLISSAGE CHIMICO-MÉCANIQUE (CMP) POUR LE POLISSAGE DE SUBSTRATS COMPRENANT DU COBALT
  申请人：BASF SE

  公开号：WO2017025536A1

  公开（公告）日：2017-02-16

  Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and /or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer ≥ 1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.
• [EN] CHEMICAL MECHANICAL POLISHING COMPOSITION<br/>[FR] COMPOSITION DE POLISSAGE CHIMICO-MÉCANIQUE
  申请人：BASF SE

  公开号：WO2019101555A1

  公开（公告）日：2019-05-31

  The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) com- position comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.