Pentanoic acid, 2-methyl, 3-methylbutyl ester | 5448-56-6

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: Pentanoic acid, 2-methyl, 3-methylbutyl ester
• 英文别名: 3-methylbutyl 2-methylpentanoate
• CAS: 5448-56-6
• 化学式: C₁₁H₂₂O₂
• 分子量: 186.29
• InChiKey: ACBVJQOFOUNQJU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.7
• 重原子数：
  13
• 可旋转键数：
  7
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.91
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• LUBRICATING OIL FOR REFRIGERATOR, HYDRAULIC FLUID COMPOSITION FOR REFRIGERATOR AND METHOD FOR LUBRICATION OF REFRIGERATOR
  申请人：NEW JAPAN CHEMICAL CO.,LTD.

  公开号：EP1225213A1

  公开（公告）日：2002-07-24

  The invention provides a lubricating oil for refrigerators, comprising (a) at least one ester represented by the formula (1) wherein R1 is C1 to C18 straight-chain alkyl or C3 to C18 branched-chain alkyl; R2 is H, C1 to C18 straight-chain alkyl or C3 to C18 branched-chain alkyl; with the poviso that the total number of carbons contained in the alkyls represented by R1 and R2 is 2 to 18 and that when R2 is H, R1 is branched-chain alkyl; and R3 is C1 to C20 straight-chain alkyl, C3 to C20 branched-chain alkyl or C3 to C10 cycloalkyl, optionally in combination with (b) at least one member selected from the group consisting of fatty acid polyol esters, phthalic acid esters, alicyclic dicarboxylic acid esters, polyvinyl ethers, hydrocarbon oils and polyalkylene glycols; as well as a method for lubricating a refrigerator using such a lubricating oil, and a working fluid composition for refrigerators comprising (I) component (a) or components (a) and (b) and (II) a refrigerant.

  本发明提供了一种用于冰箱的润滑油，包括 (a) 至少一种由式 (1) 代表的酯类 其中 R1 是 C1 至 C18 直链烷基或 C3 至 C18 支链烷基；R2 是 H、C1 至 C18 直链烷基或 C3 至 C18 支链烷基；前提是 R1 和 R2 所代表的烷基所含的碳总数为 2 至 18，且当 R2 为 H 时，R1 为支链烷基；和 R3 是 C1 至 C20 直链烷基、C3 至 C20 支链烷基或 C3 至 C10 环烷基，可选择与 (b) 至少一种选自脂肪酸多元醇酯、邻苯二甲酸酯、脂环二羧酸酯、聚乙烯醚、烃油和聚烷基二 醇组成的组的成员结合使用；以及一种使用这种润滑油润滑冰箱的方法，和一种用于冰箱的工作液组合物，该组合物包括 (I) 成分 (a) 或成分 (a) 和 (b) 以及 (II) 制冷剂。
• Pattern formation methods and photoresist pattern overcoat compositions
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US11003074B2

  公开（公告）日：2021-05-11

  A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

  一种图案形成方法，包括：(a) 提供半导体衬底；(b) 在半导体衬底上形成光刻胶图案，其中光刻胶图案由光刻胶组合物形成，光刻胶组合物包括包含可酸基团的第一种聚合物；以及光酸发生器； (c) 在光刻胶图案上涂覆图案涂层组合物，其中图案涂层组合物包含第二种聚合物和有机溶剂，其中有机溶剂包含一种或多种酯溶剂，其中酯溶剂的式为 R1-C(O)O-R2，其中 R1 为 C3-C6 烷基，R2 为 C5-C10 烷基；(d) 烘烤涂层光刻胶图案；以及 (e) 用漂洗剂漂洗涂层光刻胶图案，以去除第二种聚合物。这些方法特别适用于半导体器件的制造。
• PATTERN FORMATION METHODS AND PHOTORESIST PATTERN OVERCOAT COMPOSITIONS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20180314155A1

  公开（公告）日：2018-11-01

  A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R 1 —C(O)O—R 2 , wherein R 1 is a C3-C6 alkyl group and R 2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.
• US6667285B1
  申请人：——

  公开号：US6667285B1

  公开（公告）日：2003-12-23