2,5-bis(2-thienyl)-3,6-dipentadecylthieno[3,2-b]thiophene | 924657-17-0

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 双噻吩和低聚噻吩
• 英文名称: 2,5-bis(2-thienyl)-3,6-dipentadecylthieno[3,2-b]thiophene
• 英文别名: 3,6-Di(pentadecyl)-2,5-dithiophen-2-ylthieno[3,2-b]thiophene
• CAS: 924657-17-0
• 化学式: C₄₄H₆₈S₄
• 分子量: 725.288
• InChiKey: CARNTZGTJDKFLO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  21.1
• 重原子数：
  48
• 可旋转键数：
  30
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.68
• 拓扑面积：
  113
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  2,5-dibromo-3,6-dipentadecylthieno[3,2-b]thiophene 、 2-三丁基甲锡烷基噻吩 在 bis-triphenylphosphine-palladium(II) chloride 作用下， 以 四氢呋喃 为溶剂， 生成 2,5-bis(2-thienyl)-3,6-dipentadecylthieno[3,2-b]thiophene
  参考文献：
  名称：

  Low band-gap polymers based on quinoxaline derivatives and fused thiophene as donor materials for high efficiency bulk-heterojunction photovoltaic cells

  摘要：

  和聚[2,3-双(4-己氧基苯基)喹喔啉-alt-2,5-双(噻吩-2-基)-3,6-二十五烷基噻吩并[3,2-b]噻吩]（PQTPDTT），并研究了它们的光伏特性。PQTT 和 PQTPDTT 的带隙分别为 1.65eV 和 1.7eV。PQTPDTT 的 HOMO 电平为 -5.12eV，低于 P3HT 的 HOMO 电平。根据对使用 PC61BM 和 PC71BM 作为受体的光伏器件的特性分析，当使用 PQTPDTT/PC71BM 混合薄膜作为活性层时，在 100mW/cm2 （AM 1.5 照明）条件下，开路电压 (VOC) 为 0.71V，短路电流 (JSC) 为 8.80mA/cm2，填充因子为 0.36，功率转换效率 (PCE) 为 2.27%。检测到的入射光子电流效率（IPCE）非常高（400 纳米波长为 60%，500 纳米波长为 57%）。

  DOI：

  10.1039/b823536h

文献信息

• FIELD EFFECT TRANSISTOR
  申请人：TORAY INDUSTRIES, INC.

  公开号：US20160035457A1

  公开（公告）日：2016-02-04

  There is provided a field effect transistor which comprises a gate insulating layer, a gate electrode, a semiconductor layer, a source electrode and a drain electrode. The gate insulating layer contains an organic compound that contains a silicon-carbon bond and a metal compound that contains a bond between a metal atom and an oxygen atom; and the metal atoms are contained in the gate insulating layer in an amount of 10 to 180 parts by weight with respect to 100 parts by weight of the total of carbon atoms and silicon atoms. This field effect transistor (FET) has high mobility and a low voltage of the threshold value, while being suppressed in leak current.

  提供了一种场效应晶体管，包括栅绝缘层、栅电极、半导体层、源极电极和漏极电极。栅绝缘层包含一种含有硅碳键的有机化合物和一种含有金属原子和氧原子之间键的金属化合物；金属原子在栅绝缘层中的含量为100份碳原子和硅原子的总重量中的10至180份重量。该场效应晶体管具有高迁移率和低阈值电压，同时抑制泄漏电流。
• FIELD EFFECT-TRANSISTOR, METHOD FOR MANUFACTURING SAME, WIRELESS COMMUNICATION DEVICE USING SAME, AND PRODUCT TAG
  申请人：Toray Industries, Inc.

  公开号：EP3690956A1

  公开（公告）日：2020-08-05

  A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.

  一种场效应晶体管，至少包括：基板；源电极；漏电极；栅电极；与源电极和漏电极接触的半导体层；以及绝缘于半导体层和栅电极之间的栅绝缘层，其中半导体层包含碳纳米管，栅绝缘层包含具有无机颗粒的聚合物。本发明提供了一种场效应晶体管和一种生产该场效应晶体管的方法，其中该场效应晶体管可降低泄漏电流，并可进一步使半导体溶液均匀涂敷。
• Field-effect transistor, method for manufacturing the same, and wireless communication device and goods tag including the same
  申请人：TORAY INDUSTRIES, INC.

  公开号：US10790461B2

  公开（公告）日：2020-09-29

  A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): in the general formula (1), R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.

  场效应晶体管包括：基板；源电极；漏电极；栅电极；与源电极和漏电极接触的半导体层；以及绝缘于半导体层和栅电极之间的栅绝缘层。栅极绝缘层至少包括一种聚硅氧烷，其结构单元由通式（1）表示： 在通式（1）中，R1 代表氢原子、烷基、环烷基、杂环基、芳基、杂芳基或烯基；R2 代表氢原子、烷基、环烷基或硅基；m 代表 0 或 1；A1 代表有机基团，包括至少两个选自羧基、磺基、硫醇基、酚羟基或这些基团的衍生物的基团。
• FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING SAME, WIRELESS COMMUNICATION DEVICE USING SAME AND ARTICLE TAG
  申请人：Toray Industries, Inc.

  公开号：EP3547383B1

  公开（公告）日：2020-06-24
• GATE INSULATING MATERIAL, GATE INSULATING FILM AND ORGANIC FIELD-EFFECT TRANSISTOR
  申请人：Murase Seiichiro

  公开号：US20110068417A1

  公开（公告）日：2011-03-24

  To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component. A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1): R 1 m Si(OR 2 ) 4-m (1), wherein R 1 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R 1 s are present, R 1 s may be the same or different, R 2 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R 2 s are present, R 2 s may be the same or different, and m represents an integer of 1 to 3, and an epoxy group-containing silane compound represented by the general formula (2): R 3 n R 4 l Si(OR 5 ) 4-n-1 (2), wherein R 3 represents an alkyl group or a cycloalkyl group having one or more epoxy groups in a part of a chain and in the case where a plurality of R 3 s are present, R 3 s may be the same or different, R 4 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R 4 s are present, R 4 s may be the same or different, R 5 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R 5 s are present, R 5 s may be the same or different, l represents an integer of 0 to 2, and n represents 1 or 2 (however, l+n≦3).