(4-Pentafluorobenzoyl-phenyl)-pentafluorophenyl-methanone | 30780-33-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: (4-Pentafluorobenzoyl-phenyl)-pentafluorophenyl-methanone
• 英文别名: 1,4-Bis(pentafluorobenzoyl)benzene；[4-(2,3,4,5,6-pentafluorobenzoyl)phenyl]-(2,3,4,5,6-pentafluorophenyl)methanone
• CAS: 30780-33-7
• 化学式: C₂₀H₄F₁₀O₂
• 分子量: 466.235
• InChiKey: SNJOSDUUTGFXJX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.6
• 重原子数：
  32
• 可旋转键数：
  4
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  34.1
• 氢给体数：
  0
• 氢受体数：
  12

反应信息

• 作为产物：
  描述：

  五氟苯锂 、 邻苯二甲酰氯 生成 (4-Pentafluorobenzoyl-phenyl)-pentafluorophenyl-methanone
  参考文献：
  名称：

  Dua,S.S. et al., Organometallics in Chemical Synthesis, 1970, vol. 1, p. 87 - 92

  摘要：

  DOI：

文献信息

• Methods and compounds for making coatings, waveguides and other optical devices
  申请人：——

  公开号：US20030162985A1

  公开（公告）日：2003-08-28

  A compound of the general formula R 1 R 2 MR 4 R 5 is disclosed wherein R 1 and R 2 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R 1 and R 2 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, wherein R 4 and R 5 are independently an alkoxy group, OR 3 , or a halogen group, X, except where M is Si, R 4 and R 5 are both ethoxy groups or both chlorine groups, and R 1 and R 2 are perfluorinated groups. This compound formed can be further reacted to attach an additional organic R group, and/or hydrolyzed, alone or with one or more similar compounds, to form a material having a molecular weight of from 500 to 10,000, which material can be deposited on various substrates as a coating or deposited and patterned for a waveguide or other optical device components. Methods for making compounds of the general formula R 1 MR 4 R 5 R 6 are also disclosed.

  揭示了一种通用公式为R1R2MR4R5的化合物，其中R1和R2分别是芳基、烷基、烯基、环氧基或炔基，其中至少一个R1和R2是全氟化或部分氟化的，其中M选自周期表的14族元素，其中R4和R5分别是烷氧基、OR3或卤素基X，除非M是硅，否则R4和R5都是乙氧基或氯基，而R1和R2是全氟化基团。形成的这种化合物可以进一步反应以连接额外的有机R基团，并/或水解，单独或与一个或多个类似化合物一起，形成分子量为500至10,000的材料，该材料可以沉积在各种基底上作为涂层，或沉积并加工成波导或其他光学器件组件的图案。还揭示了制备通用公式为R1MR4R5R6的化合物的方法。
• Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
  申请人：Rantala T. Juha

  公开号：US20060131753A1

  公开（公告）日：2006-06-22

  An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm 3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm 3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

  提供了一种集成电路，包括基底和电气绝缘和电气导体材料的离散区域，其中电气绝缘材料是一种混合有机-无机材料，具有1.45克/厘米3或更高的密度和3.0或更低的介电常数。该集成电路可以通过以下方法制造：提供基底；在基底上形成电气绝缘和电气导体材料的离散区域；其中电气绝缘材料在基底上沉积后，在350℃或更低的温度下加热；并且在致密化后，电气绝缘材料具有1.45克/厘米3或更高的密度。还公开了一种制造集成电路的方法，包括使用电气导体材料和介电材料执行双刻蚀法，其中介电材料是直接光图案化的混合有机-无机材料。
• Integrated circuits having organic-inorganic dielectric materials and methods for forming such integrated circuits
  申请人：——

  公开号：US20040002617A1

  公开（公告）日：2004-01-01

  A method for making an integrated circuit is disclosed comprising depositing alternating regions of electrically conductive material and hybrid organic inorganic dielectric material on a substrate, wherein an area of dielectric material is formed by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material comprised of a silicon oxide backbone and having an organic substituent bound to the backbone, and depositing the hybrid organic inorganic material on a substrate, removing the hybrid organic-inorganic material in selected areas, and depositing an electrically conductive material in the selected areas, wherein one of the precursors is a compound of the general formula R 1 R 2 R 3 SiR 4 , wherein R 1 , R 2 , R 3 are each bound to the Si and are independently an aryl group, a cross linkable group, or an alkyl group having from 1-14 carbons, and wherein R 4 is selected from the group consisting of an alkoxy group, an acyloxy group, an —OH group or a halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate, comprising: hydrolyzing a silane selected from the group consisting of a tetraalkoxysilane, a trialkoxysilane, a trichlorosilane, a dialkoxysilane, and a dichlorosilane, with a compound of the general formula: R 1 R 2 R 4 MR 5 , wherein R 1 , R 2 and R 4 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R 1 , R 2 and R 4 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, and wherein R 5 is either an alkoxy group, OR 3 , or a halogen (X).

  本发明公开了一种制造集成电路的方法，包括在基板上沉积交替区域的电导材料和混合有机无机介电材料，其中通过水解多种前体物质形成由硅氧骨架组成并具有有机取代基结合的混合有机无机材料形成介电材料区域，然后在基板上沉积混合有机无机材料，去除所选区域的混合有机无机材料，并在所选区域沉积电导材料，其中前体物质之一是具有一般式R1R2R3SiR4的化合物，其中R1、R2、R3分别与Si结合，并且独立地是芳基、交联基或具有1-14个碳的烷基，而R4选自具有烷氧基、酰氧基、—OH基或卤素的群。本发明还公开了一种在基板上形成混合有机无机层的方法，包括将一种选择自四烷氧基硅烷、三烷氧基硅烷、三氯硅烷、二烷氧基硅烷和二氯硅烷的硅烷与一种具有一般式R1R2R4MR5的化合物水解，其中R1、R2和R4独立地是芳基、烷基、烯基、环氧基或炔基，其中至少有一个R1、R2和R4是完全或部分氟化的，M选自周期表第14族元素，而R5是烷氧基、OR3或卤素（X）。
• Dielectric materials and methods for integrated circuit applications
  申请人：Rantala T. Juha

  公开号：US20050032357A1

  公开（公告）日：2005-02-10

  An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

  提供一种集成电路器件，其具有基底和电绝缘和电导材料区域，其中电绝缘材料是一种混合有机-无机材料，不需要或最小限度需要CMP，并且可以承受450°C或更高温度下的后续加工步骤。
• Materials and methods for forming hybrid organic-inorganic anti-stiction materials for micro-electromechanical systems
  申请人：——

  公开号：US20040012061A1

  公开（公告）日：2004-01-22

  A micro-electromechanical device is formed on a substrate. The device has sliding, abrading or impacting surfaces. At least one of these surfaces is covered with an anti-stiction material. The anti-stiction material is provided from a slicon compound precursor (e.g. silane, silanol) or multiple silicon compound precursors. Preferably the precursor(s) is fluorinated—more preferably perfluorinated, and is deposited with a solvent as a low molecular weight oligomer or in monomeric form. Examples include silanes (fluorinated or not) with aromatic or polycyclic ring sturctures, and/or silanes (fluorinated or not) having alkenyl, alkynyl, epoxy or acrylate groups. Mixtures either or both of these groups with alkyl chain silanes (preferably fluorinated) are also contemplated.

  一种微电子机械设备形成在基板上。该设备具有滑动、磨损或冲击表面。这些表面中至少有一个覆盖有防粘附材料。该防粘附材料是由硅化合物前体（例如硅烷、硅醇）或多种硅化合物前体提供的。优选前体是氟化的，更优选是全氟化的，并以溶剂形式沉积为低分子量寡聚物或单体形式。例如，包括具有芳香环或多环环结构的硅烷（氟化或非氟化），以及具有烯基、炔基、环氧或丙烯酸酯基团的硅烷（氟化或非氟化）。还可以考虑将这些基团中的任何一个或两个与烷基链硅烷（优选氟化）混合。