This disclosure relates to tertiary amine solutions of metal precursors used for chemical vapor deposition or atomic layer deposition. The tertiary amine solutions have many advantages. They dissolve high concentrations of non-polar precursors without reacting with them. They do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. Vaporization rates can be chosen so that the solute and solvent may be evaporated simultaneously, have high flash points, and low flammability. Small droplets may be formed easily which facilitate rapid evaporation without decomposition of he dissolved metal precursor to supply vapors for chemical vapor deposition or atomic layer deposition processes.
本公开涉及用于
化学气相沉积或原子层沉积的
金属前驱体的叔胺溶液。叔胺溶液有许多优点。它们能溶解高浓度的非极性前驱体,而不会与之发生反应。它们不会向所生产的材料提供
氧气或卤素等杂质,也不会蚀刻或腐蚀材料。可选择蒸发速度,使溶质和溶剂同时蒸发,具有高闪点和低可燃性。小液滴很容易形成,有利于快速蒸发而不会分解溶解的
金属前体,为
化学气相沉积或原子层沉积工艺提供蒸汽。