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N,N'-di-sec-butylacetamidine | 106500-96-3

中文名称
——
中文别名
——
英文名称
N,N'-di-sec-butylacetamidine
英文别名
N,N'-bis(1-methylpropyl)ethanimidamide;N,N'-di(butan-2-yl)ethanimidamide
N,N'-di-sec-butylacetamidine化学式
CAS
106500-96-3
化学式
C10H22N2
mdl
——
分子量
170.298
InChiKey
YQRPYRGJGSCPEW-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.3
  • 重原子数:
    12
  • 可旋转键数:
    5
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.9
  • 拓扑面积:
    24.4
  • 氢给体数:
    1
  • 氢受体数:
    1

反应信息

点击查看最新优质反应信息

文献信息

  • CHEMICAL DEPOSITION RAW MATERIAL INCLUDING HETEROGENEOUS POLYNUCLEAR COMPLEX AND CHEMICAL DEPOSITION METHOD USING THE CHEMICAL DEPOSITION RAW MATERIAL
    申请人:TANAKA KIKINZOKU KOGYO K.K.
    公开号:US20180079764A1
    公开(公告)日:2018-03-22
    The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which as ligands, at least a diimine and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, and the chemical deposition raw material is represented by the following formula. In the formula, the first transition metal (M 1 ) and the second transition metal (M 2 ) are mutually different. The number of diimines (L) is 1 or more and 2 or less, and to the diimine is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents R 1 to R 4 . With the present chemical deposition raw material, a composite metal thin film or a composite metal compound thin film containing a plurality of metals can be formed from a single raw material.
    本发明涉及一种化学沉积原料,其中包括一个不均匀的多核配合物,其中至少一个二亚胺和一个羰基作为配体,配合到第一过渡金属和第二过渡金属作为中心金属,该化学沉积原料由以下公式表示。在该公式中,第一过渡金属(M1)和第二过渡金属(M2)是互不相同的。二亚胺(L)的数量为1或多个,2或少个,并且二亚胺与氢原子和碳数为1至5的烷基之一配位,作为取代基R1到R4的每个。使用本化学沉积原料,可以从单个原料形成含有多种金属的复合金属薄膜或复合金属化合物薄膜。
  • Heterogeneous polynuclear complex for use in the chemical deposition of composite metal or metal compound thin films
    申请人:TANAKA KIKINZOKU KOGYO K.K.
    公开号:US10407450B2
    公开(公告)日:2019-09-10
    A heterogeneous polynuclear complex for use as a raw material in the chemical deposition of composite metal or composite metal thin films with the below formula. In the formula, M1 and M2 are mutually different transition metals, x is an integer of 0 or more and 2 or less, y is in integer of 1 or more and 2 or less, z is an integer of 1 or more and 10 or less, R1 to R4 are each one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less, and R5 is a hydrogen atom, a carbonyl, an alkyl group with a carbon number of 1 or more and 7 or less, an allyl group or an allyl derivative. The heterogeneous polynuclear complex allows a composite metal thin film or a composite metal compound thin film containing a plurality of metals to be formed from a single raw material.
    一种异质多核络合物,可用作复合金属或复合金属薄膜化学沉积的原料,其化学式如下。式中,M1 和 M2 是互不相同的过渡金属,x 是 0(含)以上 2(含)以下的整数,y 是 1(含)以上 2(含)以下的整数,z 是 1(含)以上 10(含)以下的整数,R1 至 R4 分别是氢原子和碳原子数为 1(含)以上 5(含)以下的烷基,R5 是氢原子、羰基、碳原子数为 1(含)以上 7(含)以下的烷基、烯丙基或烯丙基衍生物。异质多核络合物可以用单一原料形成含有多种金属的复合金属薄膜或复合金属化合物薄膜。
  • Vapor source using solutions of precursors in tertiary amines
    申请人:President and Fellows of Harvard College
    公开号:US11319452B2
    公开(公告)日:2022-05-03
    This disclosure relates to tertiary amine solutions of metal precursors used for chemical vapor deposition or atomic layer deposition. The tertiary amine solutions have many advantages. They dissolve high concentrations of non-polar precursors without reacting with them. They do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. Vaporization rates can be chosen so that the solute and solvent may be evaporated simultaneously, have high flash points, and low flammability. Small droplets may be formed easily which facilitate rapid evaporation without decomposition of he dissolved metal precursor to supply vapors for chemical vapor deposition or atomic layer deposition processes.
    本公开涉及用于化学气相沉积或原子层沉积的金属前驱体的叔胺溶液。叔胺溶液有许多优点。它们能溶解高浓度的非极性前驱体,而不会与之发生反应。它们不会向所生产的材料提供氧气或卤素等杂质,也不会蚀刻或腐蚀材料。可选择蒸发速度,使溶质和溶剂同时蒸发,具有高闪点和低可燃性。小液滴很容易形成,有利于快速蒸发而不会分解溶解的金属前体,为化学气相沉积或原子层沉积工艺提供蒸汽。
  • Synthesis and Characterization of Copper(I) Amidinates as Precursors for Atomic Layer Deposition (ALD) of Copper Metal
    作者:Zhengwen Li、Seán T. Barry、Roy G. Gordon
    DOI:10.1021/ic048492u
    日期:2005.3.21
    A series of copper(I) amidinates of the general type [(R ' NC(R)NR '')Cu](2) (R ' and R '' = n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl; R = methyl, n-butyl) have been synthesized and characterized. These compounds are planar dimers, bridged by nearly linear N-Cu-N bonds. Their properties (volatility, low melting point, high thermal stability, and self-limited surface reactivity) are well-suited for atomic layer deposition (ALD) of copper metal films that are pure, highly conductive, conformal, and strongly adherent to substrates.
  • Use of lanthanide(III) ions as catalysts for the reactions of amines with nitriles
    作者:John H. Forsberg、Vincent T. Spaziano、Trichey M. Balasubramanian、Gordon K. Liu、Steven A. Kinsley、Charles A. Duckworth、John J. Poteruca、Paul S. Brown、Judith L. Miller
    DOI:10.1021/jo00382a009
    日期:1987.3
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