Synthesis and characterization of phenanthroimidazole derivatives for applications in organic electroluminescent devices
作者:Ying Zhang、Shiu-Lun Lai、Qing-Xiao Tong、Mei-Yee Chan、Tsz-Wai Ng、Zhi-Chun Wen、Guo-Qiang Zhang、Shuit-Tong Lee、Hoi-Lun Kwong、Chun-Sing Lee
DOI:10.1039/c1jm10326a
日期:——
A series of phenanthroimidazole derivatives have been synthesized, characterized and applied as non-doped emitters in organic light-emitting devices. The compounds show high fluorescent quantum yields up to 0.75 as well as good thermal and film-forming abilities. Crystal structures of the compounds were determined by X-ray crystallography. Correlations between optoelectronic properties, energy levels and molecular structures of the materials were investigated. It was found that introduction of a thiophene ring on the C2-position of phenanthroimidazole can effectively decrease the ionization potentials (Ip) of the compounds. Fluorescent properties of the materials were found to be related to the dihedral angles in the compounds with different substituents. The low Ip (from 5.00 to 5.21 eV) of the materials enables efficient hole-injection from the hole-transporting layer and results in low turn-on (<2.7 V) and operation voltages (<5.5 V to give 1000 cd m−2).
我们合成了一系列菲咯咪唑衍生物,对其进行了表征,并将其用作有机发光器件中的非掺杂发光体。这些化合物显示出高达 0.75 的荧光量子产率以及良好的热性能和成膜能力。这些化合物的晶体结构是通过 X 射线晶体学确定的。研究了材料的光电特性、能级和分子结构之间的相关性。研究发现,在菲咯咪唑的 C2 位上引入噻吩环可有效降低化合物的电离电位(Ip)。研究发现,材料的荧光特性与不同取代基化合物的二面角有关。材料的低 Ip(从 5.00 到 5.21 eV)使得空穴传输层能够有效地注入空穴,从而实现低开启电压(<2.7 V)和低工作电压(<5.5 V,1000 cd m-2)。