5-bromo-2-dimethylamino-benzoic acid | 77265-72-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 5-bromo-2-dimethylamino-benzoic acid
• 英文别名: N.N-Dimethyl-5-brom-anthranilsaeure；5-Brom-2-dimethylamino-benzoesaeure；5-Bromo-2-(dimethylamino)benzoic acid
• CAS: 77265-72-6
• 化学式: C₉H₁₀BrNO₂
• 分子量: 244.088
• InChiKey: CYTXUPXHVXSDML-UHFFFAOYSA-N

物化性质

• 沸点：
  357.0±32.0 °C(Predicted)
• 密度：
  1.563±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.2
• 重原子数：
  13
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.22
• 拓扑面积：
  40.5
• 氢给体数：
  1
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  重氮甲烷 、 5-bromo-2-dimethylamino-benzoic acid 在 水 作用下， 生成 5-溴-2-(二甲基氨基)苯甲酸甲酯 、 4-bromo-2-carboxy-tri-N-methyl-anilinium betaine
  参考文献：
  名称：

  Kuhn; Brydowna, Chemische Berichte, 1937, vol. 70, p. 1333,1339

  摘要：

  DOI：
• 作为产物：
  描述：

  5-溴-2-(二甲氨基)苯基]甲醇 生成 5-bromo-2-dimethylamino-benzoic acid
  参考文献：
  名称：

  v.Braun; Kruber, Chemische Berichte, 1913, vol. 46, p. 3465

  摘要：

  DOI：

文献信息

• Resist composition and patterning process
  申请人：Watanabe Satoshi

  公开号：US20100009299A1

  公开（公告）日：2010-01-14

  The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

  本发明涉及一种抗蚀组合物，例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物，除了在微细加工的光刻工艺中具有更高的分辨率外，特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中；以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物，其包括一种或多种胺化合物或胺氧化合物（除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物），至少具有一个羧基，并且没有氢原子共价键结合到氮原子作为碱性中心。
• SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160090355A1

  公开（公告）日：2016-03-31

  A sulfonium salt of formula (0-1) is provided wherein W is alkylene or arylene, R 01 is a monovalent hydrocarbon group, m is 0, 1 or 2, k is an integer: 0≦k≦5+4m, R 101 , R 102 and R 103 are a monovalent hydrocarbon group, or at least two of R 101 , R 102 and R 103 may bond together to form a ring with the sulfur atom, and L is a single bond, ester, sulfonic acid ester, carbonate or carbamate bond. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.

  提供一种化学式为（0-1）的磺鎓盐，其中W是烷基或芳基，R01是一价碳氢基团，m为0、1或2，k为整数：0≦k≦5+4m，R101、R102和R103是一价碳氢基团，或者R101、R102和R103中至少两个可以相互结合形成与硫原子的环，L是单键、酯、磺酸酯、碳酸酯或氨基甲酸酯键。包含磺鎓盐作为PAG的抗蚀组成物在经过电子束或极紫外光刻过程时表现出非常高的分辨率。可获得具有最小LER的图案。
• SULFONIUM SALT, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION USING SAID POLYMER, AND RESIST PATTERNING PROCESS
  申请人：DOMON Daisuke

  公开号：US20120308920A1

  公开（公告）日：2012-12-06

  There is disclosed a sulfonium salt shown by the following general formula (1). There can be a sulfonium salt capable of introducing an acid-generating unit generating an acid having an appropriate acid strength and not impairing adhesion with a substrate into a base polymer; a polymer using the said sulfonium salt; a chemically amplified resist composition using the said polymer as a base polymer; and a patterning process using the said chemically amplified resist composition.

  公开了一种由以下一般式（1）所示的硫銨鹽。可以有一种硫銨鹽，能夠將一個能夠生成具有適當酸度並不損害與基材的粘附性的酸的酸生成單元引入到基聚合物中；使用所述硫銨鹽的聚合物；使用所述聚合物作為基聚合物的化學放大的抗蝕組成物；以及使用所述化學放大的抗蝕組成物的圖案形成過程。
• POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS
  申请人：Masunaga Keiichi

  公开号：US20110212391A1

  公开（公告）日：2011-09-01

  A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.

  使用含有氟化羧基离子盐结构的重复单元的聚合物作为侧链，用于配制化学增感正型光刻胶组分。当该组分通过光刻工艺形成正型图案时，胶膜中的酸扩散均匀缓慢，从而改善LER。
• CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Masunaga Keiichi

  公开号：US20110212390A1

  公开（公告）日：2011-09-01

  A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.

  提供了一种化学放大负型光刻胶组合物，包括（A）一种可溶于碱性溶液的基础聚合物，（B）一种酸发生剂，和（C）一种含氮化合物，基础聚合物（A）在酸的催化下变为碱不溶性。在侧链上含有氟化羧酸亚烷基盐的聚合物被包括在基础聚合物中。通过光刻工艺处理负型光刻胶组合物可以形成具有以下优点的光刻图案：酸的扩散均匀低、LER改善和减少衬底污染。