Semiconductor devices are described that include a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound. The acenyl group is selected from 2-naphtyl, 2-anthracenyl, or 2-tetracenyl. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound.
本文描述了包含含有trans-1,2-bis(acenyl)ethylene化合物的半导体层的半导体器件。其中,acenyl基团选自2-
萘基、2-
蒽基或2-四
蒽基。此外,本文还描述了制造半导体器件的方法,其中包括沉积含有trans-1,2-bis(acenyl)ethylene化合物的半导体层。