Solution-Processable n-Type Organic Field-Effect Transistor (OFET) Materials Based on Carbonyl-Bridged Bithiazole and Dioxocyclopentene-Annelated Thiophenes
作者:Masashi Nitani、Yutaka Ie、Hirokazu Tada、Yoshio Aso
DOI:10.1002/asia.201100098
日期:2011.9.5
A series of electronegative π‐conjugated compounds composed of carbonyl‐bridged bithiazole and alkyl‐substituted dioxocyclopenta[b]thiophene were synthesized as a candidate for solution‐processable n‐type organic semiconductor materials and characterized on the basis of photophysical and electrochemical properties. Cyclic voltammetry measurements showed that the first half‐wave reduction potentials
由羰基桥联的噻唑和烷基取代的二氧代环戊基组成的一系列带负电的π共轭化合物[ b合成]噻吩作为可溶液处理的n型有机半导体材料的候选物,并基于光物理和电化学性质对其进行了表征。循环伏安法测量表明,相对于二茂铁/二茂铁,这些化合物的前半波还原电势在-0.97和-1.14 V之间,这对应于在-3.83和-3.66 eV之间的最低未占据分子轨道能级。由于分子中具有己基或十二烷基,因此这些化合物具有足够的可溶性,可以通过旋涂法制备薄膜。结果,基于这些新开发的化合物制备的有机场效应晶体管不仅在真空下而且在空气中都表现出n沟道特性,2 V -1 s -1,开/关比为10 8,阈值电压为16V。