COMPOSITION FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP3508918A1
公开(公告)日:2019-07-10
The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.
本发明提供了:一种用于形成有机薄膜的组合物,该组合物具有高过滤性,能够形成具有高图案抗弯曲性的有机薄膜,并且在干法蚀刻后能够防止特别细于40纳米的高光谱线图案发生线崩溃和扭曲;一种使用该组合物的形成有机薄膜的方法和图案化工艺;以及一种用于制造半导体器件的基板,包括在该基板上形成的有机薄膜。用于形成有机薄膜的组合物包括缩合物(A),它是下式(1)所示的二羟基萘和缩合剂的缩合产物,或缩合物(A)的衍生物。冷凝液(A)或冷凝液(A)的衍生物所含成分元素中的硫含量按质量计算不超过 100 ppm。