tricyclopentyl-amine | 811810-74-9

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: tricyclopentyl-amine
• 英文别名: Tricyclopentyl-amin；N,N-dicyclopentylcyclopentanamine
• CAS: 811810-74-9
• 化学式: C₁₅H₂₇N
• 分子量: 221.386
• InChiKey: NILJCGYQNXKIRL-UHFFFAOYSA-N

物化性质

• 沸点：
  320 °C
• 密度：
  0.97±0.1 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  4.1
• 重原子数：
  16
• 可旋转键数：
  3
• 环数：
  3.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  3.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为产物：
  描述：

  环戊酮肟 、 alkaline earth salt of/the/ methylsulfuric acid 、 alkaline earth salt of/the/ methylsulfuric acid 生成 N-环戊基环戊胺 、 tricyclopentyl-amine 、 环戊胺
  参考文献：
  名称：

  Sabatier; Mailhe, Comptes Rendus Hebdomadaires des Seances de l'Academie des Sciences, 1914, vol. 158, p. 987

  摘要：

  DOI：

文献信息

• PROCESS FOR PREPARING FORMIC ACID
  申请人：Fachinetti Giuseppe

  公开号：US20130006015A1

  公开（公告）日：2013-01-03

  A process for preparing formic acid by hydrogenation of carbon dioxide in the presence of a tertiary amine (I) and a catalyst at a pressure of from 0.2 to 30 MPa abs and a temperature of from 20 to 200° C., wherein the catalyst is a heterogeneous catalyst comprising gold.

  在三级胺（I）和催化剂的存在下，通过在0.2到30兆帕绝对压力和20到200摄氏度的温度下，将二氧化碳加氢制备甲酸的方法，其中催化剂是包含金的非均相催化剂。
• Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
  申请人：——

  公开号：US20040167322A1

  公开（公告）日：2004-08-26

  A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.

  一种化学放大型抗蚀组合物，包括在苯环上的2-位含有长链烷氧基基团的特定苯磺酰二氮甲烷，具有许多优点，包括提高分辨率，改善焦点宽度，即使在长期PED上也减少线宽变化或形状退化，涂层、显影和剥离后减少残留物，并在显影后改善图案轮廓，因此适用于微加工。
• COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20170073288A1

  公开（公告）日：2017-03-16

  The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

  根据本发明，该化合物由特定的公式表示。根据本发明，该化合物具有特定公式的结构，因此可应用于湿法工艺，具有优异的耐热性和耐蚀性。此外，根据本发明，该化合物具有特定结构，因此具有高耐热性、相对较高的碳浓度、相对较低的氧浓度以及高溶剂溶解性。因此，根据本发明的化合物可用于形成在高温烘烤时降解受抑制且在氧等离子体蚀刻中具有优异耐蚀性的底层膜。此外，该化合物在与光阻层的粘附性方面也表现出色，因此可形成优异的光阻图案。
• Photoacid generators, chemically amplified resist compositions, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20070292768A1

  公开（公告）日：2007-12-20

  A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.

  一种光酸发生剂的化学式为（1）。包括该光酸发生剂的化学增感抗蚀组合物具有诸如高分辨率、焦点宽度、长期PED尺寸稳定性和令人满意的图案轮廓形状等优点。当该光酸发生剂与具有除了缩醛类型以外的酸敏感基团的树脂结合时，可以改善分辨率和顶部损失。该组合物适用于深紫外光刻。
• Resist composition and patterning process
  申请人：Watanabe Satoshi

  公开号：US20100009299A1

  公开（公告）日：2010-01-14

  The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

  本发明涉及一种抗蚀组合物，例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物，除了在微细加工的光刻工艺中具有更高的分辨率外，特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中；以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物，其包括一种或多种胺化合物或胺氧化合物（除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物），至少具有一个羧基，并且没有氢原子共价键结合到氮原子作为碱性中心。