The disclosure generally relates to a composition and process for cleaning residue and/or contaminants from microelectronic devices having said residue and contaminants thereon. The residue may include post-CMP, post-etch, and/or post-ash residue. The compositions and methods are particularly advantageous when cleaning a microelectronic surface comprising copper, low-k dielectric materials, and barrier materials comprising at least one of tantalum-containing material, cobalt-containing material, tantalum-containing, tungsten-containing, and ruthenium-containing material.
本公开内容一般涉及一种组合物和工艺,用于清洗微电子设备上的残留物和/或污染物。残留物可包括
CMP 后、蚀刻后和/或冲洗后残留物。本发明的组合物和方法在清洁由
铜、低介电材料和至少一种含
钽材料、含
钴材料、含
钽材料、含
钨材料和含
钌材料组成的阻挡层材料构成的微电子表面时特别有利。