4-methoxy-N,N-bis(methoxymethyl)aniline | 1443365-07-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4-methoxy-N,N-bis(methoxymethyl)aniline
• CAS: 1443365-07-8
• 化学式: C₁₁H₁₇NO₃
• 分子量: 211.261
• InChiKey: JTKWEQXFRNAMMN-UHFFFAOYSA-N

物化性质

• 沸点：
  303.0±37.0 °C(Predicted)
• 密度：
  1.071±0.06 g/cm3(Temp: 20 °C; Press: 760 Torr)(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  1.9
• 重原子数：
  15
• 可旋转键数：
  6
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  30.9
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  4'4-二巯基二苯硫醚 、 4-methoxy-N,N-bis(methoxymethyl)aniline 在 samarium(III) nitrate hexahydrate 作用下， 以 二氯甲烷 、 乙酸乙酯 为溶剂， 反应 0.5h， 以77%的产率得到6,14,22-tris(4-methoxyphenyl)-2,4,8,10,12,16,18,20,24-nonathia-6,14,22-triaza-1,3,9,11,17,19(1,4)-hexabenzenacyclotetracosaphane
  参考文献：
  名称：

  Efficient Synthesis of N-Aryl-substituted Nonathiatriaza-(1,4)-hexabenzocyclotetracosaphanes

  摘要：

  6,14,22-Triaryl-2,4,8,10,12,16,18,20,24-nonathia-6,14,22-triaza-1,3,9,11,17,19(1,4)-hexabenzocyclotetracosaphanes are synthesized in high yield and selectivity by cycloaminomethylation of 4,4-thiodibenzenethiol with N,N-bis(methoxymethyl)-N-arylamines in the presence of a Sm(NO3)(3)6H(2)O catalyst.

  DOI：

  10.1134/s1070428018110064

文献信息

• Efficient synthesis of 3-aryl(hetaryl)-1,5,3-dioxazepanes involving catalysts containing Sm and Co
  作者：N. N. Makhmudiyarova、K. I. Prokof’ev、L. V. Mudarisova、A. G. Ibragimov、U. M. Dzhemilev

  DOI：10.1134/s1070428013050217

  日期：2013.5

  Efficient synthetic procedure was developed for 3-aryl(hetaryl)-1,5,3-dioxazepanes consisting in the transamination of 3-tert-butyl-1,5,3-dioxazepane with arylamines and also by the reaction of 1,2-ethanediol with N,N-bis(methoxymethyl)aryl(hetaryl)amines in the presence of catalytic amounts of Sm and Co compounds.

  开发了用于3-芳基（杂芳基）-1,5,3-二恶唑烷的合成方法，该方法包括3-叔丁基-1,5,3-二恶唑烷与芳胺的氨基转移反应，以及1,2-的反应。乙二醇与N，N-双（甲氧基甲基）芳基（杂芳基）胺在催化量的Sm和Co化合物存在下。
• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20140045117A1

  公开（公告）日：2014-02-13

  A pattern forming method, includes: (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a1) a repeating unit capable of decomposing by an action of an acid to produce a carboxyl group, represented by the following formula (I) as defined in the specification and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film; and (iii) a step of performing a development by using a developer containing an organic solvent to form a negative pattern.
• ACTINIC RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN
  申请人：FUJIFILM Corporation

  公开号：US20140234759A1

  公开（公告）日：2014-08-21

  According to one embodiment, there is provided an actinic ray- or radiation-sensitive resin composition containing (A) a resin containing a repeating unit represented by general formula (1) below and a repeating unit that is decomposed by an action of an acid to generate an alkali-soluble group, and (B) a compound that generates the acid when exposed to actinic rays or radiation, where L represents a bivalent connecting group, R 1 represents a hydrogen atom or an alkyl group, and Z represents a cyclic acid anhydride structure.
• US9140981B2
  申请人：——

  公开号：US9140981B2

  公开（公告）日：2015-09-22
• US9213237B2
  申请人：——

  公开号：US9213237B2

  公开（公告）日：2015-12-15