The present invention provides an organic semiconductor material which exhibits a high mobility, and excellent solubility in solvents and oxidation resistance. The present invention also provides an organic semiconductor thin film exhibiting a high mobility, and an organic semiconductor device exhibiting excellent electronic characteristics. A transistor structure is formed by coating the silicon substrate with a thin film of pentacene compound substituted halogens at 6 and 13 positions and aliphatic hydrocarbons at 2, 3, 9 and 10 positions, wherein the substrate is patterned beforehand with gold to have a source and drain electrodes.
本发明提供了一种有机半导体材料,具有高迁移率、良好的溶解性和氧化抗性。本发明还提供了一种具有高迁移率的有机半导体薄膜和具有优异电子特性的有机半导体器件。通过在
硅衬底上涂覆取代卤素的五环
芘化合物薄膜和2、3、9和10位脂肪族烃的薄膜,形成晶体管结构,其中衬底预先用
金进行图案处理以具有源和漏极电极。