2,7-dioctyn-1-yl[1]benzothieno[3,2-b][1]benzothiophene | 1003601-92-0

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并噻吩类
• 英文名称: 2,7-dioctyn-1-yl[1]benzothieno[3,2-b][1]benzothiophene
• 英文别名: 2,7-di(1-octynyl)[1]benzothieno[3,2-b][1]benzothiophene；2,7-Bis(oct-1-ynyl)-[1]benzothiolo[3,2-b][1]benzothiole
• CAS: 1003601-92-0
• 化学式: C₃₀H₃₂S₂
• 分子量: 456.716
• InChiKey: FOFNREUNPZWOPR-UHFFFAOYSA-N

物化性质

• 沸点：
  625.8±50.0 °C(Predicted)
• 密度：
  1.14±0.1 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  12.1
• 重原子数：
  32
• 可旋转键数：
  10
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.4
• 拓扑面积：
  56.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2,7-dioctyn-1-yl[1]benzothieno[3,2-b][1]benzothiophene 在 palladium on activated charcoal 氢气 作用下， 以 甲苯 为溶剂， 以82%的产率得到2,7-二辛基[1]苯并噻吩并[3,2-b][1]苯并噻吩
  参考文献：
  名称：

  Highly Soluble [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors

  摘要：

  2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm(2) V-1 S-1 and /(n)//(off) of -10(7).

  DOI：

  10.1021/ja074841i
• 作为产物：
  描述：

  2,7-diiodo[1]benzothieno[3,2-b][1]benzothiophene 、 1-辛炔 在 bis-triphenylphosphine-palladium(II) chloride 、 copper(l) iodide 二异丙胺 作用下， 以 苯 为溶剂， 反应 8.0h， 以77%的产率得到2,7-dioctyn-1-yl[1]benzothieno[3,2-b][1]benzothiophene
  参考文献：
  名称：

  Highly Soluble [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors

  摘要：

  2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm(2) V-1 S-1 and /(n)//(off) of -10(7).

  DOI：

  10.1021/ja074841i

文献信息

• FIELD-EFFECT TRANSISTOR
  申请人：Nippon Kayaku Kabushiki Kaisha

  公开号：EP2077590A1

  公开（公告）日：2009-07-08

  Disclosed is a field-effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material. (In the formula (1), X1 and X2 independently represent a sulfur atom, a selenium atom or a tellurium atom; and R1 and R2 independently represent an unsubstituted or halogeno-substituted C1-C36 aliphatic hydrocarbon group.)

  本发明公开了一种场效应晶体管，其特征是使用下式（1）所代表的化合物作为半导体材料。 (在式(1)中，X1 和 X2 独立地代表硫原子、硒原子或碲原子；R1 和 R2 独立地代表未取代的或卤代取代的 C1-C36 脂肪族烃基)。
• Field-effect transistor
  申请人：Nippon Kayaku Kabushiki Kaisha

  公开号：EP2077590B1

  公开（公告）日：2013-06-19
• US8124964B2
  申请人：——

  公开号：US8124964B2

  公开（公告）日：2012-02-28
• Highly Soluble [1]Benzothieno[3,2-<i>b</i>]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors
  作者：Hideaki Ebata、Takafumi Izawa、Eigo Miyazaki、Kazuo Takimiya、Masaaki Ikeda、Hirokazu Kuwabara、Tatsuto Yui

  DOI：10.1021/ja074841i

  日期：2007.12.1

  2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm(2) V-1 S-1 and /(n)//(off) of -10(7).