Disilane- and siloxane-bridged biphenyl and bithiophene derivatives as electron-transporting materials in OLEDs
作者:Hiroyuki Kai、Joji Ohshita、Sayaka Ohara、Naohiro Nakayama、Atsutaka Kunai、In-Sook Lee、Young-Woo Kwak
DOI:10.1016/j.jorganchem.2008.08.018
日期:2008.11
disilane-bridged biphenyl and siloxane-bridged bithiophene should have the low-lying HOMOs and LUMOs. The electron-transporting properties were evaluated by the performance of triple-layered OLEDs having vapor-deposited films of the Si-bridged compound, Alq3, and TPD, as the electron-transport, emitter, and hole-transport, respectively. Of these, the device with a disilane-bridged biphenyl exhibited
与单硅烷桥联类似物(硅烷)相比,研究了乙硅烷桥联和硅氧烷桥联的联苯和联噻吩衍生物的光学,电化学和电子传输性质。紫外光谱和循环伏安图表明,根据DFT计算的结果,硅桥的伸长抑制了π共轭。DFT计算还表明,乙硅烷桥联苯和硅氧烷桥联联噻吩应具有低位的HOMO和LUMO。通过具有Si桥连化合物Alq 3的气相沉积膜的三层OLED的性能来评估电子传输性能。和TPD分别作为电子传输,发射极和空穴传输。其中,带有乙硅烷桥联苯的器件在12×10 7 V / m的施加电场(施加的偏置电压= 13 V)和最大的电场强度下表现出高性能,最大电流密度为590 mA / cm 2。在13×10 7 V / m时亮度为22000 cd / m 2。