The invention relates to novel amino alcohols of the general formula (I) where X, R1, R2, R3, R4, R5 and R6 are each as defined in detail in the description, to a process for their preparation and to the use of these compounds as medicines, in particular as renin inhibitors.
NITROGEN-CONTAINING ORGANIC COMPOUND, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:SAGEHASHI Masayoshi
公开号:US20120052441A1
公开(公告)日:2012-03-01
An aralkylcarbamate of imidazole base is effective as the quencher. In a chemically amplified positive resist composition comprising the carbamate, deprotection reaction of carbamate takes place by reacting with the acid generated upon exposure to high-energy radiation, whereby the composition changes its basicity before and after exposure, resulting in a pattern profile with advantages including high resolution, rectangular shape, and minimized dark-bright difference.
Diaminoalcohol derivatives for the treatment of Alzheimer, malaria, HIV
申请人:Speedel Experimenta AG
公开号:EP1764099A2
公开(公告)日:2007-03-21
Use of compounds of the general formula (I)
wherein R1, R2, R3, R4, R5, R6 and X have the definitions elucidated in more detail in the description, as beta-secretase, cathepsin D, plasmepsin II and/or HIV protease inhibitors.
하기 일반식(1)으로 나타내어지는 화합물을 함유하는 것을 특징으로 하는 감활성광선성 또는 감방사선성 수지 조성물. [상기 일반식(1)에 있어서, R은 다환식 방향족기 또는 다환식 복소환식 방향족기를 나타내고, R는 (n+2)가의 포화 탄화수소기를 나타내고, R은 (m+2)가의 포화 탄화수소기를 나타내고, R 및 R는 각각 독립적으로 치환기를 나타내고, Q는 헤테로 원자를 함유하는 연결기를 나타내고, m 및 n은 각각 독립적으로 0~12의 정수를 나타내고, n이 2 이상인 경우, R는 같아도 좋고 달라도 좋고, R가 서로 연결되어 R와 함께 비방향족환을 형성하여도 좋고, m이 2 이상인 경우, R는 같아도 좋고 달라도 좋고, R가 서로 연결되어 R과 함께 비방향족환을 형성하여도 좋고, 또한 X는 비구핵성 음이온을 나타낸다.]
SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:OHSAWA Youichi
公开号:US20120045724A1
公开(公告)日:2012-02-23
A sulfonium salt of a naphthylsulfonium cation having a hydrophilic phenolic hydroxyl group or ethylene glycol chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark-bright difference.