4'-dimethylamino-2,4-dihydroxy-benzophenone | 160818-07-5

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4'-dimethylamino-2,4-dihydroxy-benzophenone
• 英文别名: 4'-Dimethylamino-2,4-dihydroxy-benzophenon；Methanone, (2,4-dihydroxyphenyl)[4-(dimethylamino)phenyl]-；(2,4-dihydroxyphenyl)-[4-(dimethylamino)phenyl]methanone
• CAS: 160818-07-5
• 化学式: C₁₅H₁₅NO₃
• 分子量: 257.289
• InChiKey: MFVGRLIGGZNHRJ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.1
• 重原子数：
  19
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.13
• 拓扑面积：
  60.8
• 氢给体数：
  2
• 氢受体数：
  4

上下游信息

• 上游原料

  中文名称	英文名称	CAS号	化学式	分子量
  米氏酮	bis(p-dimethylaminophenyl)methanone	90-94-8	C17H20N2O	268.359

反应信息

• 作为产物：
  描述：

  米氏酮 在 zinc(II) chloride 、 间苯二酚 作用下， 生成 4'-dimethylamino-2,4-dihydroxy-benzophenone
  参考文献：
  名称：

  Wenzing, Chemische Berichte, 1914, vol. 47, p. 2153

  摘要：

  DOI：

文献信息

• Undercoating composition for photolithographic resist
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：EP0803777A1

  公开（公告）日：1997-10-29

  Proposed is a novel undercoating composition to form an undercoating layer interposed between the surface of a substrate and a photoresist layer with an object to decrease the adverse influences by the reflection of light on the substrate surface in the pattern-wise exposure of the photoresist layer to ultraviolet light without the undesirable phenomena of intermixing between layers and notching along with a large selectivity ratio in the etching rates between the patterned resist layer and the undercoating layer in a dry-etching treatment. The undercoating composition comprises (A) an ultraviolet absorber which is a benzophenone compound or an aromatic azomethine compound each having at least one unsubstituted or alkyl-substituted amino group on the aryl groups and (B) a crosslinking agent which is preferably a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atoms in a molecule in a weight proportion (A):(B) in the range from 1:1 to 1:10.

  本发明提出了一种新颖的底涂层组合物，用于在基底表面和光刻胶层之间形成底涂层，目的是减少光刻胶层在紫外线下图案化曝光时基底表面光反射的不利影响，同时在干蚀刻处理中图案化抗蚀剂层和底涂层之间的蚀刻率具有较大的选择性比，而不会出现层间混杂和缺口等不良现象。底涂层组合物包括(A)紫外线吸收剂，它是二苯甲酮化合物或芳香族偶氮亚甲基化合物，每种化合物的芳基上至少有一个未取代或烷基取代的氨基；(B)交联剂，它最好是三聚氰胺化合物，分子中至少有两个甲醇基团或烷氧基甲基基团与氮原子键合，重量比例(A):(B)在 1:1 至 1:10 之间。
• Novolak resin precursor, novolak resin and positive photoresist composition containing the novolak resin
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：EP0902326A2

  公开（公告）日：1999-03-17

  A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho-ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.

  一种新酚醛树脂前体由键合的酚基组成，每个酚基的 o 位或 p 位上相对于羟基的一个氢原子被具有 1 至 3 个碳原子的烷基或烯基取代，另外两个氢原子通过亚甲基键键合。相对于亚甲基键总数，正交-正交键的含量为 30%至 70%，前体的重量平均分子量为 300 至 10,000。从这种前体中可以得到一种酚醛树脂，一种正性光刻胶组合物就包含这种酚醛树脂。本发明提供的正性光刻胶组合物含有较少的双核化合物，可抑制浮渣的形成，具有优异的清晰度和涂布性能，并提供具有令人满意的耐热性的抗蚀图案。
• ADHESIVE COMPOSITION FOR BONDING WATER AND SUPPORTING BODY FOR SAID WAFER, ADHESIVE FILM, AND LAMINATE
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：EP2757136A1

  公开（公告）日：2014-07-23

  The adhesive composition for bonding a wafer and a support for the wafer according to the present invention contains an elastomer in which a styrene unit is contained as a constituent unit of a main chain, a content of the styrene unit is 14% by weight to 50% by weight, and a weight average molecular weight is 10,000 to 200,000.

  根据本发明，用于粘合晶片和晶片支撑物的粘合剂组合物含有一种弹性体，其中苯乙烯单元作为主链的组成单元，苯乙烯单元的含量为 14% 至 50%（按重量计），重量平均分子量为 10,000 至 200,000。
• Photosensitive resin composition, photosensitive, sheet, semiconductor device and method for manufacturing semiconductor device
  申请人：TORAY INDUSTRIES, INC.

  公开号：US10705425B2

  公开（公告）日：2020-07-07

  A photosensitive resin composition which contains a compound represented by general formula (1). (In general formula (1), R1-R4 may be the same or different, and each represents a hydrogen atom or an organic group having 1-4 carbon atoms; and X represents a tetravalent organic group having two or more structural units represented by general formula (2) in the main chain.) (In general formula (2), R5 represents a hydrogen atom or an alkyl group having 1-20 carbon atoms, and a plurality of R5s in the same molecule may be the same or different.) Provided is a photosensitive resin composition which enables the achievement of a cured film having low stress after being heated and fired, and which has excellent long-term stability, high sensitivity and high resolution.

  一种光敏树脂组合物，其中含有通式（1）所代表的化合物。(通式（1）中，R1-R4 可以相同或不同，各自代表氢原子或具有 1-4 个碳原子的有机基团；X 代表主链上具有两个或多个通式（2）所代表结构单元的四价有机基团）。(在通式（2）中，R5 代表氢原子或具有 1-20 个碳原子的烷基，同一分子中的多个 R5 可以相同或不同）。本发明提供了一种光敏树脂组合物，该组合物能够获得加热和烧制后应力较小的固化膜，并且具有出色的长期稳定性、高灵敏度和高分辨率。
• Phenol novolak resin, production process thereof, and positive photoresist composition using the same
  申请人：——

  公开号：US20010024762A1

  公开（公告）日：2001-09-27

  A phenol novolak resin has a peak intensity ratio of ortho-ortho bond (o-o)/ortho-para bond (o-p)/para-para bond (p-p) in a resin structure not substantially varying in each molecular weight fraction and has a weight average molecular weight (Mw) of 3000 to 20000 in terms of polystyrene, which peak intensity ratio is detected by 13 C-NMR analysis. The phenol novolak resin can form both dense pattern and isolation pattern with good shapes in the formation of a fine resist pattern of not more than 0.35 &mgr;m and has satisfactory sensitivity, definition, and focal depth range properties, and has a resin composition being uniform in each molecular weight fraction. A process for producing the phenol novolak resin, and a positive photoresist composition using the resin are also provided.

  苯酚酚醛树脂在树脂结构中的正交-正交键（o-o）/正交-副交键（o-p）/副交键（p-p）的峰强度比在每个分子量组分中没有实质性变化，以聚苯乙烯计，其重量平均分子量（Mw）为 3000 至 20000，该峰强度比通过以下方法检测 13 C-NMR 分析可检测到这一峰值强度比。苯酚酚醛树脂可以形成致密图案和隔离图案，在形成不超过 0.35 &mgr;m 的精细抗蚀剂图案时具有良好的形状，并具有令人满意的灵敏度、清晰度和焦深范围特性，而且每个分子量分数的树脂成分都是均匀的。此外，还提供了生产苯酚酚醛树脂的工艺和使用该树脂的正性光刻胶组合物。