This disclosure relates to a process for stripping an organic film on a patterned semiconductor substrate. The process includes treating the organic film with an aqueous stripper composition to remove the organic film in one step. The organic film includes at least a first layer and a second layer, the first layer has a dissolution rate of at most about 0.01μ/min in a developer at 25° C., and the second layer has a dissolution rate of greater than about 0.01μ/min in the developer at 25° C.
本公开涉及一种剥离图案化半导体衬底上有机薄膜的工艺。该工艺包括用
水性剥离剂组合物处理有机薄膜,以一步去除有机薄膜。有机膜至少包括第一层和第二层,第一层在 25 摄氏度的显影液中的溶解速率最多约为 0.01μ/min,第二层在 25 摄氏度的显影液中的溶解速率大于约 0.01μ/min。