Transformation of luminescence centers in (SiC)0.95(AlN)0.05 epitaxial Layers under Laser Irradiation
摘要:
The effect of laser irradiation on the photoluminescence of (SiC)(0.95)(AlN)(0.05) epitaxial films was studied. irradiation was found to dislodge Al and N atoms from their substitutional sites, producing radiative donor-acceptor pairs Al-Si-N-C. The average pair separation decreases with increasing irradiation time, as evidenced by the shift of the corresponding emission to higher energies.
Transformation of luminescence centers in (SiC)0.95(AlN)0.05 epitaxial Layers under Laser Irradiation
摘要:
The effect of laser irradiation on the photoluminescence of (SiC)(0.95)(AlN)(0.05) epitaxial films was studied. irradiation was found to dislodge Al and N atoms from their substitutional sites, producing radiative donor-acceptor pairs Al-Si-N-C. The average pair separation decreases with increasing irradiation time, as evidenced by the shift of the corresponding emission to higher energies.