Silylcuprates from Allene and Their Reaction with α,β-Unsaturatedd Nitriles and Imines. Synthesis of Silylated Oxo Compounds Leading to Cyclopentane and Cycloheptane Ring Formation
作者:Asunción Barbero、Yolanda Blanco、Francisco J. Pulido
DOI:10.1021/jo0509814
日期:2005.8.1
silylcupration of allenes and the subsequent capture of the intermediate cuprate with α,β-unsaturated nitriles is reported. The influence of the substitution of the nitrile, the nature of the silylcopper species, and the temperature on the selectivity of the reaction is studied. An interesting diaddition process was observed (1,2-addition and 1,4-addition), leading to oxo compounds which simultaneously have an allylsilane
CHEMICAL VAPOR DEPOSITION RAW MATERIAL INCLUDING DINUCLEAR RUTHENIUM COMPLEX AND CHEMICAL DEPOSITION METHOD USING CHEMICAL VAPOR DEPOSITION RAW MATERIAL
申请人:TANAKA KIKINZOKU KOGYO K.K.
公开号:US20180201636A1
公开(公告)日:2018-07-19
The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the chemical vapor deposition raw material including a dinuclear ruthenium complex in which carbonyl and a nitrogen-containing organic ligand (L) are coordinated to metallically bonded two rutheniums, the dinuclear ruthenium complex being represented by the following formula (
1
): A raw material according to the present invention is capable of producing a high-purity ruthenium thin film, and has a low melting point and moderate thermal stability. Thus, the raw material according to the present invention is suitable for use in electrodes of various kinds of devices.
Reactions of monoazadienes with metal carbonyl complexes.II. REACTIONS OF N-ALKYL-(E)-CROTONALDIMINE WITH Ru3(CO)12. THE X-RAY CRYSTAL STRUCTURE OF Ru3(CO)6(CH3-CCH-CHN-C3H7-i)2, AN ACYCLIC CLUSTER WHICH IS ISOLOBALLY RELATED TO RUTHENOCENE
作者:Wilhelmus P. Mul、Cornelis J. Elsevier、Kees Vrieze、Wilberth J. J. Smeets、Anthony L. Spek
DOI:10.1002/recl.19881070335
日期:——
The reaction of Ru3(CO)12 with CH3-CHCH-CHN-C3H7-i in refluxing heptane yields RU3(CO)6(CH3-CCH-CHN-C3H7-i)2 in two stereoisomeric forms, together with several other products. One of the stereoisomers was purified. The X-raycrystalstructure shows an unprecedented bent trinuclear metal core with two metal-metal bonds. The two γ-metallated monoazadienyl ligands each donate 7e to the acyclic cluster
钌的反应3(CO)12用CH 3 -CHCH-CHN-C 3 H ^ 7 -i在回流的正庚烷产生RU 3(CO)6(CH 3 -CCH-CHN-C 3 H ^ 7 -i)2在两种立体异构形式,以及其他几种产品。纯化了一种立体异构体。X射线晶体结构显示出前所未有的具有两个金属-金属键的弯曲三核金属核。两个γ-金属化的单氮杂二烯基配体各自为无环簇贡献7e。
FT-IR investigation of the proton acceptor ability of trans-butenylidene-isopropylamine
作者:P. Migchels、Th. Zeegers-Huyskens
DOI:10.1016/0022-2860(91)87071-o
日期:1991.7
by OH⋯N bonds. The proton transfer constants have been calculated for complexes involving phenols (p K a =6−3.5). The variation of the stretching frequencies v (OH⋯N↔3O − ⋯H + N), and of the isotopic ratio of the stretching frequencies as a function of Δp K a shows a minimum at a Δ K a value between 2 and 2.5. This value corresponds to a doubleminimum for the potential surface of the proton and not
摘要 在四氯化碳和 1,2-二氯乙烷中通过 FT-IR 光谱研究了反式亚丁烯基异丙胺 (BIPA) 和苯酚衍生物 (p K a =10.2-0.4) 之间的氢键。BIPA与苯酚之间形成氢键的热力学参数(p K a =10.20-7.75)表明配合物很强,光谱行为表明它们以OH⋯N键为特征。已经计算了涉及酚的复合物的质子转移常数 (p K a =6-3.5)。伸缩频率 v (OH⋯N↔3O − ⋯H + N) 的变化以及作为 Δp K a 函数的伸缩频率的同位素比的变化在 Δ K a 值介于 2 和 2.5 之间时显示出最小值。
Chemical vapor deposition raw material including dinuclear ruthenium complex and chemical deposition method using chemical vapor deposition raw material
申请人:TANAKA KIKINZOKU KOGYO K.K.
公开号:US10815260B2
公开(公告)日:2020-10-27
The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the chemical vapor deposition raw material including a dinuclear ruthenium complex in which carbonyl and a nitrogen-containing organic ligand (L) are coordinated to metallically bonded two rutheniums, the dinuclear ruthenium complex being represented by the following formula (1): A raw material according to the present invention is capable of producing a high-purity ruthenium thin film, and has a low melting point and moderate thermal stability. Thus, the raw material according to the present invention is suitable for use in electrodes of various kinds of devices.