The preparation and structures of Ph3AsGaI3 and [Ph3AsI][GaI4]
摘要:
Colourless crystals of Ph(3)AsGaI(3) (1) have been prepared by reaction of triphenylarsine with GaI3.OEt(2) in diethyl ether. The structure of 1, in which the length of the As-Ga donor-acceptor bond is 2.490(2) Angstrom, has been determined by an X-ray diffraction study. In contact with the solvent phase, 1 is transformed into yellow crystals of [Ph(3)AsI][GaI4], 2 which has been structurally characterised by Raman Spectroscopy (As-I stretching at 196 cm(-1)) and by X-ray diffraction. The salt 2 is the first arsenic(V) iodo complex to have been examined crystallographically; the As-I bond distance is 2.485(1) Angstrom.
作者:L.-J. Baker、Lars A. Kloo、Clifton E.F. Rickard、Michael J. Taylor
DOI:10.1016/s0022-328x(97)00221-0
日期:1997.1
Adducts Ph3PGaI3 and Ph3AsGaI3 obtained by adding the ligands to Et2OGaI3 have been investigated by Ga-71 NMR, IR/Raman spectroscopy and X-ray diffraction. Et2OInI3 with Ph3P gives (Ph3P)(3)(InI3)(2). Ph3As yields (Ph3As)(3)(InI3)(2) . H2O as rhombohedral crystals whose structure was solved by X-ray diffraction. Both these indium complexes contain Ph3EInI3 molecules alongside five-coordinate adducts (Ph3E)(2)InI3 with the Ph3E ligands attached in axial sites by long and unequal bonds to a planar InI3 unit. Vibrational assignments are made for Ph3PGaI3, Ph3AsGaI3, Ph3EInI3 and (Ph3E)(2)InI3 (E = P or As). (C) 1997 Elsevier Science S.A.
Gallium(III) halide complexes with phosphines, arsines and phosphine oxides – a comparative study
作者:Fei Cheng、Hannah L. Codgbrook、Andrew L. Hector、William Levason、Gillian Reid、Michael Webster、Wenjian Zhang
DOI:10.1016/j.poly.2007.05.008
日期:2007.9
been prepared and their structural and spectroscopic properties compared with those of the phosphinoyl complexes. The results, and competitive solution NMR studies, show that Ga(III) binds the hard R3PO in preference to the softer phosphine or arsine ligands. Hydrolysis of gallium(III) phosphines is shown to lead to [R3PH][GaX4], but in contrast to some other p-block halides, GaX3 do not promote air-oxidation
制备了氧化膦配合物[GaX 3(Me 3 PO)]和[(GaX 3)2 μ- o -C 6 H 4(CH 2 P(O)Ph 2)2 }],并通过微分析对其进行了表征,红外和多核NMR(1 H,13 C 1 H},31 P 1 H}和71 Ga)光谱。[GaCl 3(Me 3 PO)],[(GaBr 3)2 μ- o -C 6 H 4(CH 2 P(O)Ph 2)2 }]和离子产物[GaI 2(Me 3 PO)2 ] [GaI 4 ]的测定已经表明,卤化镓对膦酰基配体的路易斯酸性降低了卤素变得更重。[GaX 3(Ph 3 E)](X = Cl,Br或I; E = P或As)和[(GaX 3)2 μ- o -C 6 H 4(CH 2 PPh 2)2}](X = Br或I)已制备,并且其结构和光谱性质与膦酰基配合物相比。结果和竞争性溶液NMR研究表明,Ga(III)优先将硬R 3
The preparation and structures of Ph3AsGaI3 and [Ph3AsI][GaI4]
作者:L.-J. Baker、Clifton E.F. Rickard、Michael J. Taylor
DOI:10.1016/0022-328x(94)87020-9
日期:1994.1
Colourless crystals of Ph(3)AsGaI(3) (1) have been prepared by reaction of triphenylarsine with GaI3.OEt(2) in diethyl ether. The structure of 1, in which the length of the As-Ga donor-acceptor bond is 2.490(2) Angstrom, has been determined by an X-ray diffraction study. In contact with the solvent phase, 1 is transformed into yellow crystals of [Ph(3)AsI][GaI4], 2 which has been structurally characterised by Raman Spectroscopy (As-I stretching at 196 cm(-1)) and by X-ray diffraction. The salt 2 is the first arsenic(V) iodo complex to have been examined crystallographically; the As-I bond distance is 2.485(1) Angstrom.