Ga[NMe₂]₃

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: Ga[NMe₂]₃
• 英文别名: gallium tris(dimethylamide)；gallium;dimethylazanide
• 化学式: 3C₂H₆N*Ga
• 分子量: 201.952
• InChiKey: MOSDREQYZVBAMY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.24
• 重原子数：
  4.0
• 可旋转键数：
  0.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  14.1
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为反应物：
  描述：

  Ga[NMe₂]₃ 在 异丙氧基乙醇 作用下， 以 甲苯 为溶剂， 反应 26.0h， 以89%的产率得到
  参考文献：
  名称：

  MOLECULAR PRECURSOR COMPOUNDS FOR ZINC-GROUP 13 MIXED OXIDE MATERIALS

  摘要：

  分子前体化合物、制备Zn-Group 13混合氧化物材料（包括IZO、GZO、AZO和BZO）的过程和组合物，方法是提供包含具有公式M的分子前体化合物的油墨，在基底上印刷或沉积这些油墨。印刷或沉积的油墨膜可以经处理转化为材料。

  公开号：

  US20150218190A1
• 作为产物：
  描述：

  lithium dimethylamide 、 氯化镓 以 正己烷 为溶剂， 生成 Ga[NMe₂]₃
  参考文献：
  名称：

  纳米结构的GaN：微观结构和光学性质。

  摘要：

  In the present study, the microstructure and optical properties of a nanostructured composite that consists of nanocrystalline GaN imbedded in a poly(methyl methacrylate) thin film matrix (GaN/PMMA) are reported. X-ray powder diffraction and high-resolution transmission electron microscopy were performed to analyze the microstructure, while the optical properties were measured by optical absorption and photoluminescence. Microstructural analyses showed that GaN nanocrystallites imbedded in the PMMA matrix have a size of about 5.5 nm, and crystallize in the zinc-blende lattice (the lattice constant a(0) similar to 0.45 nm) with a considerable fraction of structural defects such as nitrogen; vacancies and stacking faults. Optical-absorption measurements indicate that the band-gap energy of the GaN/PMMA composite is approximately 3.51 eV.

  DOI：

  10.1103/physrevb.54.17763

文献信息

• Cyclopentadienylidene‐ and Fluoren‐9‐ylidene‐methane‐1,1‐dithiolato Metalates of Tin, Indium and Bismuth
  作者：Tobias Vollgraff、Nick Michel、Jörg Sundermeyer

  DOI：10.1002/ejic.202100570

  日期：2021.10.7

  well as stannates(II) [PPh4]2[Sn(CpCS2)2] (5-PPh4) and [NBu4]2[Sn(FluoCS2)2] (9-NBu4) were XRD structurally characterized. Reaction of electron-rich ligand Na2(FluoCS2) with SnCl4 did not lead to an expected stannate(IV) but to a redox reaction and metal free 3,5-di(9H-fluorene-9-ylidene)-1,2,4-trithiolane (12), which was characterized by XRD analysis. The title compounds are related to much better investigated

  季铵和鏻锡酸盐 (II)、茚酸 (III) 和铋酸盐 (III) 显示双阴离子S,S 二硫醇螯合物配体 [CpCS 2 ] 2−和 [FluoCS 2 ] 2− (Cp=C 5 H 4 , Fluo=C 13 H 8 ) 进行了描述。以 Sn(II) 作为中心模板离子，均质金属化 Cat 2 [Sn(CpCS 2 ) 2 ]、In(III) 和 Bi(III)、高电荷 Cat 3 [In(CpCS 2 ) 3 ] 和 Cat 3 [ Bi(CpCS 2 ) 3] 获得。对芴-9-亚基衍生的金属化物 Cat 2 [(FluoCS 2 ) 2 Sn]、Cat 3 [(FluoCS 2 ) 3 In] 和 Cat 3 [Bi(FluoCS 2 ) 3 ]的互补系列进行了表征。杂配的铟酸盐(III) NBu 4 [CpCS 2 InMe 2 ] ( 3-NBu 4 ) 和杂配的 [PPh 4 ] 3
• Molecular precursors to gallium oxide thin films
  作者：Siama Basharat、Claire J. Carmalt、Simon J. King、Emily S. Peters、Derek A. Tocher

  DOI：10.1039/b412434k

  日期：——

  The donor-functionalised alkoxides [Et2Ga(OR)]2 (R = CH2CH2NMe2 (1), CH(CH2NMe2)2 (2), CH2CH2OMe (3), CH(CH3)CH2NMe2 (4), C(CH3)2CH2OMe (5)) were synthesised by the 1∶1 reaction of Et3Ga with ROH in hexane or dichloromethane at room temperature. Reaction of Et3Ga with excess ROH in refluxing toluene resulted in the isolation of a 1∶1 mixture of [Et2Ga(OR)]2 and the ethylgallium bisalkoxide [EtGa(OR)2] (R = CH2CH2NMe2 (6) or CH(CH3)CH2NMe2 (7)). X-ray crystallography showed that compound 6 is monomeric and this complex represents the first structurally characterised monomeric gallium bisalkoxide. Homoleptic gallium trisalkoxides [Ga(OR)3]2 were prepared by the 1∶6 reaction of [Ga(NMe2)3]2 with ROH (R = CH2CH2NMe2 (8), CH(CH3)CH2NMe2 (9), C(CH3)2CH2OMe (10)). The decomposition of compounds 1, 4, 5 and 8 were studied by thermal gravimetric analysis. Low pressure CVD of 1 and 5 resulted in the formation of thin films of crystalline Ga2O3.

  在室温下，Et3Ga 与 ROH 在己烷或二氯甲烷中发生 1∶1 反应，合成了供体官能化的烷氧基化合物 [Et2Ga(OR)]2（R = CH2CH2NMe2 (1)、CH(CH2NMe2)2 (2)、CH2CH2OMe (3)、CH(CH3)CH2NMe2 (4)、C( )2CH2OMe (5)）。Et3Ga 与过量的 ROH 在回流甲苯中反应，分离出 1∶1 的 [Et2Ga(OR)]2 和乙基镓双氧化物 [EtGa(OR)2] 混合物（R = CH2CH2NMe2 (6) 或 CH( )CH2NMe2 (7)）。X 射线晶体学显示，化合物 6 是单体的，该复合物代表了首个结构上定性的单体双氧化镓。通过[Ga(NMe2)3]2 与 ROH（R = CH2CH2NMe2 (8)、CH( )CH2NMe2 (9)、C( )2CH2OMe (10)）的 1∶6 反应，制备了同质的三氧化二镓[Ga(OR)3]2。通过热重分析研究了化合物 1、4、5 和 8 的分解情况。1 和 5 的低压化学气相沉积形成了结晶 Ga2O3 薄膜。
• Pyrolysis approach to the synthesis of gallium nitride nanorods
  作者：Wei-Qiang Han、Alex Zettl

  DOI：10.1063/1.1431401

  日期：2002.1.14

  Herein we describe a pyrolysis route to the synthesis of gallium nitride (GaN) nanorods. GaN nanorods have been grown by the pyrolysis of gallium dimethylamide and ferrocene under an ammonia atmosphere. High-resolution transmission electron microscopy and energy dispersive x-ray spectrometer show that they are GaN single crystals, the sizes of which vary from 3 to 30 μm in length and 15 to 70 nm in

  在此，我们描述了合成氮化镓 (GaN) 纳米棒的热解路线。GaN 纳米棒是通过二甲基酰胺镓和二茂铁在氨气氛下热解而生长的。高分辨率透射电子显微镜和能量色散 X 射线光谱仪显示它们是 GaN 单晶，尺寸长 3 至 30 微米，直径 15 至 70 纳米。铁是GaN纳米棒生长的重要催化剂。
• Template assisted design of microporous gallium nitride materials
  作者：Gérald Chaplais、Klaus Schlichte、Oliver Stark、Roland A. Fischer、Stefan Kaskel

  DOI：10.1039/b300348e

  日期：——

  For the first time the synthesis of a porous gallium nitride material (GaN1.15H1.18O0.06C0.04) with narrow pore size distribution in the micropore regime using a nonylamine assisted sol-gel route is reported. The yellow solid has a very high micropore volume of 0.176 cm3 g(-1) comparable to that of zeolitic solids.

  首次报道了使用壬基胺辅助的溶胶-凝胶法合成的微孔结构中孔径分布窄的多孔氮化镓材料（GaN1.15H1.18O0.06C0.04）。黄色固体具有与沸石固体相当的非常高的微孔体积，为0.176 cm3 g（-1）。
• Dimethylamino gallatrane: Solution and gas phase behaviour
  作者：Jiří Pinkas、John G. Verkade

  DOI：10.1016/0277-5387(95)00496-3

  日期：1996.5

  The gallatrane Ga(OCH2CH2)3N (1) forms a dimethylamine adduct, which exists in solutions in two tautomeric forms: a tricyclic cage, , and an open-cage bicyclic species , which were identified by 1H, 13C and 71Ga NMR spectroscopy. The mass spectrum of the adduct revealed a homologous series of oligomers of 1n, where n = 1, 2, 3 and 4.

  Gallatrane Ga（OCH 2 CH 2）3 N（1）形成二甲胺加合物，其以两种互变异构形式存在于溶液中：三环笼和开环双环，分别由1 H，13 C鉴定和71 Ga NMR光谱。加合物的质谱显示低聚物的同源系列为1 n，其中n = 1、2、3和4。