Different Steric-Twist-Induced Ternary Memory Characteristics in Nonconjugated Copolymers with Pendant Naphthalene and 1,8-Naphthalimide Moieties
作者:Ming Wang、Zhuang Li、Hua Li、Jinghui He、Najun Li、Qingfeng Xu、Jianmei Lu
DOI:10.1002/asia.201701044
日期:2017.10.18
PMNB/ITO both exhibited ternary memory performance. The switching voltages of the OFF–ON1 and ON1–ON2 transitions for both memory devices are around −2.0 and −3.5 V, respectively, and the ON1/OFF, ON2/ON1 current ratios are both up to 103. The observed tristable electrical conductivity switching could be attributed to field‐induced conformational ordering of the naphthalene rings in the side chains,
本文中,设计并合成了新型无规共聚物PMNN和PMNB,并且存储器件Al / PMNN和PMNB / ITO均表现出三元存储性能。两个存储器件的OFF–ON1和ON1–ON2转换的开关电压分别约为-2.0 V和-3.5 V,并且ON1 / OFF,ON2 / ON1电流比均高达10 3。观察到的三稳态电导率转换可归因于场致侧链中的萘环的构象有序排列,以及随后的1,8-萘二酰亚胺部分的电荷俘获。更有趣的是,通过调整1,8-萘二甲酰亚胺基团的连接位点来调节位阻效应,获得了不同的存储属性(PMNN显示了一次非易失性写入,多次读取(WORM)存储行为,而PMNB显示了非易失性静态RAM( SRAM)的内存行为)。通过调节化学部分的空间效应,该结果将为不同的高性能多级存储设备的设计提供指导。