RAW MATERIAL FOR VAPOR DEPOSITION INCLUDING ORGANOPLATINUM COMPOUND AND VAPOR DEPOSITION METHOD USING THE RAW MATERIAL FOR VAPOR DEPOSITION
申请人:TANAKA KIKINZOKU KOGYO K.K.
公开号:US20200148713A1
公开(公告)日:2020-05-14
A raw material for vapor deposition for producing a platinum thin film or a platinum compound thin film by a vapor deposition method. The raw material for vapor deposition includes an organoplatinum compound represented by the following formula, in which a cyclopentene-amine ligand and an alkyl ligand are coordinated to divalent platinum. The organoplatinum compound of the present invention has moderate thermal stability and can respond flexibly to severe film formation conditions, including a wider film formation area, higher throughput, and the like.
(In the formula, R
1
, R
2
, and R
3
are each any one of a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an amino group, an imino group, a cyano group, and an isocyano group, each having 4 or less carbon atoms, and R
4
and R
5
are each an alkyl group having 1 or more and 3 or less carbon atoms.)
一种用于通过蒸发沉积方法制备铂薄膜或铂化合物薄膜的蒸发沉积原料。蒸发沉积原料包括以下公式所代表的有机铂化合物,其中环戊烯胺配体和烷基配体与二价铂配位。本发明的有机铂化合物具有适中的热稳定性,并且可以灵活应对严格的薄膜形成条件,包括更广泛的薄膜形成区域、更高的吞吐量等。(在公式中,R1、R2和R3分别是氢原子、烷基、烯基、炔基、氨基、亚胺基、氰基和异氰基中的任意一种,每种含有4个或更少的碳原子,R4和R5分别是含有1个或更多个碳原子和3个或更少碳原子的烷基基团。)