O-氨基苯甲酸铜络合物 | 15442-49-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: O-氨基苯甲酸铜络合物
• 英文名称: Bis[2-(amino-I masculineN)benzoato-I masculineO]copper
• 英文别名: copper;2-aminobenzoate
• CAS: 15442-49-6
• 化学式: C₁₄H₁₂CuN₂O₄
• 分子量: 335.806
• InChiKey: BOZZLSTZCUGZHL-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  -0.74
• 重原子数：
  21
• 可旋转键数：
  0
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  132
• 氢给体数：
  2
• 氢受体数：
  6

反应信息

• 作为反应物：
  描述：

  O-氨基苯甲酸铜络合物 以 neat (no solvent) 为溶剂， 生成 铜
  参考文献：
  名称：

  Sur la thermogravimétrie des précipités analytiques

  摘要：

  DOI：

  10.1016/s0003-2670(00)86917-2
• 作为产物：
  描述：

  barium anthranilate 、 copper diacetate 以 水 、 溶剂黄146 为溶剂， 生成 O-氨基苯甲酸铜络合物
  参考文献：
  名称：

  Huebner, H.; Petermann, A., Liebigs Annalen der Chemie, 1869, vol. 149, p. 129 - 148

  摘要：

  DOI：

文献信息

• Dimerized thiourea derivatives, near-infrared absorbents comprising the same, and heat wave shielding materials comprising the same
  申请人：NIPPON PAPER INDUSTRIES CO., LTD.

  公开号：EP0611754A1

  公开（公告）日：1994-08-24

  A composition which comprises a thiourea derivative of Formula [1] or [2]: and a copper compound, may be used to prepare a near-infrared resin material which has a wide absorption in the near-infrared region. Typical examples of the dimerized thiourea derivative are 4,4'-di(benzylthiocarbamoyl)-aminodiphenylmethane, 4,4'-di(benzylthiocarbamoyl)-aminodiphenylhexafluo- ropropane, and 1,4'-di(dibenzoylthiocarbamoylamino)-2,5-dimethylbenzene and typical examples of the copper compound are copper stearate and copper β-acryloyloxypropylhydrogenphthalate.

  一种由式[1]或[2]的硫脲衍生物组成的组合物： 和铜化合物组成的组合物，可用于制备在近红外区域具有宽吸收率的近红外树脂材料。二聚化硫脲衍生物的典型例子有 4,4'-二（苄基硫代氨基甲酰基）-氨基二苯基甲烷、4,4'-二（苄基硫代氨基甲酰基）-氨基二苯基六氟丙烷和 1,4'-二（二苯甲酰基硫代氨基甲酰基氨基）-2,5-二甲基苯，铜化合物的典型例子有硬脂酸铜和β-丙烯酰氧基丙基氢邻苯二甲酸铜。
• POLISHING COMPOUND COMPOSITION, METHOD FOR PRODUCING SAME AND POLISHING METHOD
  申请人：Seimi Chemical Co., Ltd.

  公开号：EP1544901A1

  公开（公告）日：2005-06-22

  A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step. Particularly in a first polishing step of polishing copper wirings having a film made of tantalum or a tantalum compound as a barrier film, excellent selectivity will be obtained, dishing and erosion due to polishing are less likely to occur, and an extremely high precision flat surface of a semiconductor integrated circuit board can be obtained.

  一种用于基板化学机械抛光的抛光剂，它包括（A）磨粒、（B）水介质、（C）酒石酸、（D）三羟甲基氨基甲烷和（E）至少一种从丙二酸和马来酸组成的组中选出的成员，更优选的是，它还含有一种化合物，具有在布线金属表面形成保护膜的功能，以防止布线金属部分的剥离，如苯并三唑。通过使用这种抛光剂，半导体集成电路板表面的铜配线可以以较高的去除率进行抛光，同时在抛光步骤中抑制作为缺陷的疤痕的形成。特别是在抛光铜导线的第一道抛光步骤中，如果铜导线上有一层由钽或钽化合物制成的薄膜作为阻挡膜，则可获得极佳的选择性，不易发生因抛光而造成的分层和侵蚀，并可获得半导体集成电路板的极高精度的平整表面。
• Polishing compound, its production process and polishing method
  申请人：Kamiya Hiroyuki

  公开号：US20050194565A1

  公开（公告）日：2005-09-08

  A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step. Particularly in a first polishing step of polishing copper wirings having a film made of tantalum or a tantalum compound as a barrier film, excellent selectivity will be obtained, dishing and erosion due to polishing are less likely to occur, and an extremely high precision flat surface of a semiconductor integrated circuit board can be obtained.

  一种用于基板化学机械抛光的抛光剂，它包括（A）磨粒、（B）水介质、（C）酒石酸、（D）三羟甲基氨基甲烷和（E）至少一种从丙二酸和马来酸组成的组中选出的成员，更优选的是，它还含有一种化合物，具有在布线金属表面形成保护膜的功能，以防止布线金属部分的剥离，如苯并三唑。通过使用这种抛光剂，半导体集成电路板表面的铜配线可以以较高的去除率进行抛光，同时在抛光步骤中抑制作为缺陷的疤痕的形成。特别是在抛光铜导线的第一道抛光步骤中，如果铜导线上有一层由钽或钽化合物制成的薄膜作为阻挡膜，则可获得极佳的选择性，不易发生因抛光而造成的分层和侵蚀，并可获得半导体集成电路板的极高精度的平整表面。
• Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: Cu: MVol.B4, 169, page 1821 - 1824
  作者：

  DOI：——

  日期：——
• Ray, P.; Mukherjee, A. K., Journal of the Indian Chemical Society, 1950, vol. 27, p. 707 - 717
  作者：Ray, P.、Mukherjee, A. K.

  DOI：——

  日期：——