An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. A film forming material for lithography comprising a compound having a group of the following formula (0):
can solve the problem described above.
本发明的目的是提供一种适用于湿法工艺的光刻用成膜材料,该材料可用于形成耐热性、耐蚀刻性、对具有
水平差异的支撑材料的嵌入性能和薄膜平整度等性能优异的光刻胶底层薄膜。一种用于光刻的成膜材料,由具有下式(0)基团的化合物组成:
可以解决上述问题。