The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm
2
/Vs—some of the highest reported to date for n-type organic semiconductors.
新型的含
氟官能团化和/或杂环改性的聚
噻吩,特别是α,ω-二
全氟己基六
噻吩DFH-6T可以直接高产高纯度制备。这样的改性引入到
噻吩核心中,可以提高热稳定性和挥发性,并增加电子亲和力,相对于先前艺术中未改性的组分。蒸发薄膜表现出n型半导体的行为,并可用于制备薄膜晶体管,具有FET迁移率约为0.01 cm2 / Vs-这是迄今为止报道的n型有机半导体中最高的之一。