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2-Oxaspiro[4.5]dec-7-ene | 7164-45-6

中文名称
——
中文别名
——
英文名称
2-Oxaspiro[4.5]dec-7-ene
英文别名
——
2-Oxaspiro[4.5]dec-7-ene化学式
CAS
7164-45-6
化学式
C9H14O
mdl
——
分子量
138.21
InChiKey
RRBNKJUSNWBORK-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.8
  • 重原子数:
    10
  • 可旋转键数:
    0
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.78
  • 拓扑面积:
    9.2
  • 氢给体数:
    0
  • 氢受体数:
    1

反应信息

  • 作为产物:
    描述:
    Diazabicylononene 、 4-甲苯磺酸离子 在 ice water 、 正己烷 作用下, 以 正己烷 为溶剂, 反应 1.0h, 以to give 84.6 g的产率得到2-Oxaspiro[4.5]dec-7-ene
    参考文献:
    名称:
    Analgesic 2-oxa-spirocyclic compounds
    摘要:
    镇痛2-氧杂螺环化合物的化学式为##STR1## 其中波浪线键,p,n,m,A,q,X,Y,R,R.sub.1,R.sub.2和E的定义如规范中所述,例如,trans-4-溴-N-甲基-N-[7-(1-吡咯烷基)-2-氧杂螺[4.5]癸-8-基]苯甲酰胺和trans-3,4-二氯-N-甲基-N-[7-(1-吡咯烷基)-2-氧杂螺[4.5]癸-8-基]苯乙酰胺及其酸加成盐。还披露了将这些化合物用作镇痛剂的制药组合物和方法。还披露了制备该类化合物的过程。
    公开号:
    US04588591A1
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文献信息

  • Polymerizable compound, polymer, positive resist composition, and patterning process using the same
    申请人:Hatakeyama Jun
    公开号:US20090297979A1
    公开(公告)日:2009-12-03
    The present invention provides; a polymer suitable as a base resin for a positive resist composition, in particular a chemically amplified positive resist composition, having a higher resolution, a larger exposure allowance, a smaller sparse-dense size difference, a better process applicability, a better pattern configuration after exposure, and in addition, a further excellent etching resistance, than a conventional positive resist; a positive resist composition using the same; a patterning process; and a novel polymerizable compound to obtain a polymer like this. The present invention was accomplished by a polymer whose hydrogen atom of at least a carboxyl group is substituted by an acid labile group represented by the following general formula (2), a positive resist composition using the same, a patterning process, and a novel polymerizable compound to obtain a polymer like this.
    本发明提供了一种聚合物,适用于作为正向光刻胶组成的基础树脂,特别是化学放大正向光刻胶组成,具有更高的分辨率、更大的曝光容差、更小的稀密差异、更好的工艺适用性、曝光后更好的图案构形,以及比传统正向光刻胶更出色的蚀刻抗性;使用该聚合物的正向光刻胶组成;一种图案化工艺;以及一种新型的可聚合化合物,以获得类似的聚合物。本发明通过一种聚合物实现,其至少一个羧基的氢原子被下述通式(2)所表示的酸敏感基团所取代,使用该聚合物的正向光刻胶组成,一种图案化工艺,以及一种新型的可聚合化合物,以获得类似的聚合物。
  • POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    申请人:Hatakeyama Jun
    公开号:US20100227274A1
    公开(公告)日:2010-09-09
    A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of fluorene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
    一种正性光刻胶组合物,包括以羧基团为基础的树脂,该树脂具有氢被芴结构的酸敏感基团取代的羧基团,其在曝光前后表现出高对比度的碱性溶解速率、高分辨率、良好的图案轮廓和曝光后极小的LER,具有显著抑制酸扩散速率的效果,并提高了蚀刻抗性。
  • 2-oxa-spirocyclic-benzeneacetamides and benzamides
    申请人:THE UPJOHN COMPANY
    公开号:EP0162690A2
    公开(公告)日:1985-11-27
    A compound of the formula wherein the stereochemistry at the spiro carbon atom is either of the two possible orientations; each wavy line independently indicates cis or trans relationship of the respective nitrogen-containing substituent with respect to the cycloalkyl ring; wherein p is 0, 1, 2, 3 or 4 and n is 0, 1, 2, 3 or 4, and the cycloalkyl ring containing them has 5, 6 or 7 carbon atoms; m is 2 or 3; A is a bond, -(CH3)q- wherein q is an integer of 1 to 4, or -CH(CH3)-; X and Y are independently selected from H, F, Cl, Br, CF,, N02, OH, OCH3, azido, C1-3 alkyl, phenyl, methanesulfonyl, cyano, amino, (C1-3 alkoxy)carbonyl, C-3 alkanoyloxy and C1-3 carboxacylamino; R is H or C1-3 alkyl; either R, and R2 are independently selected from H, C1-3 alkyl and 2-propen-1-yl, or NR1R2 is 1-azetidinyl, 1-pyrrolidinyl or 1-piperidinyl; and E is oxygen or sulfur; or a pharmacologically-acceptable salt thereof. Such compounds can have therapeutic utility.
    式中的化合物 其中螺碳原子上的立体化学为两种可能取向中的一种; 每条波浪线独立地表示各含氮取代基相对于环烷基环的顺式或反式关系; 其中 p 为 0、1、2、3 或 4,n 为 0、1、2、3 或 4,含有它们的环烷基环有 5、6 或 7 个碳原子; m 是 2 或 3; A 是键、-(CH3)q-(其中 q 是 1 至 4 的整数)或-CH(CH3)-; X 和 Y 独立选自 H、F、Cl、Br、CF、N02、OH、OCH3、叠氮、C1-3 烷基、苯基、甲磺酰基、氰基、氨基、(C1-3 烷氧基)羰基、C-3 烷酰氧基和 C1-3 羧基氨基; R 是 H 或 C1-3 烷基; R 和 R2 要么独立选自 H、C1-3 烷基和 2-丙烯-1-基,要么 NR1R2 是 1-氮杂环丁基、1-吡咯烷基或 1-哌啶基;以及 E 是氧或硫; 或其药理上可接受的盐。此类化合物具有治疗作用。
  • MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    申请人:HATAKEYAMA Jun
    公开号:US20090226843A1
    公开(公告)日:2009-09-10
    A pattern is formed by applying a positive resist composition comprising a polymer comprising hydroxyalkylnaphthalene-bearing recurring units and acid labile group-bearing recurring units onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer to form a first pattern, and causing the resist film to crosslink and cure with the aid of heat or of acid and heat. A second pattern is then formed in the space area of the first pattern. The double patterning process reduces the pitch between patterns to one half.
  • PATTERNING PROCESS
    申请人:Hatakeyama Jun
    公开号:US20100203457A1
    公开(公告)日:2010-08-12
    A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask including a lattice-like first shifter and a second shifter arrayed on the first shifter and consisting of lines which are thicker than the line width of the first shifter, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.
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