n-(2-Ethylhexyl)-1h-benzotriazole-1-methanamine | 228550-11-6

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并三唑类
• 英文名称: n-(2-Ethylhexyl)-1h-benzotriazole-1-methanamine
• 英文别名: N-(benzotriazol-1-ylmethyl)-2-ethylhexan-1-amine
• CAS: 228550-11-6
• 化学式: C₁₅H₂₄N₄
• 分子量: 260.38
• InChiKey: QGLKNQRTHJUNFJ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4
• 重原子数：
  19
• 可旋转键数：
  8
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.6
• 拓扑面积：
  42.7
• 氢给体数：
  1
• 氢受体数：
  3

文献信息

• Aqueous dispersion for chemical mechanical polishing and its use for semiconductor device processing
  申请人：JSR Corporation

  公开号：EP1386949A2

  公开（公告）日：2004-02-04

  The invention provides an aqueous dispersion for chemical mechanical polishing, by which scratches are reduced even for an article to be polished having a dielectrics low in mechanical strength, both copper film and barrier metal film can be polished with high efficiency, and a sufficiently planarized finished surface with high precision can be provided without overpolishing the dielectrics, and a production process of a semiconductor device. The aqueous dispersion for chemical mechanical polishing comprises abrasive grains, wherein the abrasive grains include (A) simple particles composed of at least one selected from inorganic particles and organic particles, and (B) composite particles. It is preferred that the simple particles (A) are composed of inorganic particles and composite particles (B) are composed of inorganic organic composite particles that formed of organic particles and inorganic particles combined integraly. The production process of a semiconductor device comprises the step of polishing a surface to be polished of a semiconductor material with the aqueous dispersion for polishing.

  本发明提供了一种用于化学机械抛光的水性分散液，通过该分散液，即使是对机械强度较低的电介质进行抛光的物品，也能减少划痕，铜膜和阻挡金属膜都能高效抛光，并且在不过度抛光电介质的情况下，也能提供具有高精度的充分平面化的成品表面，以及一种半导体器件的生产工艺。 用于化学机械抛光的水性分散液包括磨粒，其中磨粒包括 (A) 由至少一种无机颗粒和有机颗粒组成的简单颗粒，以及 (B) 复合颗粒。优选的是，简单颗粒（A）由无机颗粒组成，复合颗粒（B）由无机有机复合颗粒组成，该复合颗粒由有机颗粒和无机颗粒整体组合而成。半导体设备的生产工艺包括用抛光用水分散液抛光半导体材料的待抛光表面的步骤。
• Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
  申请人：JSR Corporation

  公开号：EP1586614A1

  公开（公告）日：2005-10-19

  Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.

  公开了一种化学机械抛光水性分散液，该分散液包含（A1）比表面积不小于 10 m2/g 且小于 160 m2/g、平均二次颗粒直径不小于 170 nm 且不大于 250 nm 的第一气相法二氧化硅；（A2）比表面积不小于 160 m2/g、平均二次颗粒直径不小于 50 nm 且小于 170 nm 的第二气相法二氧化硅。还公开了一种使用化学机械抛光水分散液的化学机械抛光方法。根据该化学机械抛光水性分散液和化学机械抛光方法，可进行化学机械抛光工艺，其中通过抛光可有效去除阻挡金属层和盖层，并减少对存在于底层中的低介电常数绝缘膜材料的损坏。
• Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion
  申请人：JSR Corporation

  公开号：EP1700893A1

  公开（公告）日：2006-09-13

  A chemical mechanical polishing aqueous dispersion, including: (A) abrasives; (B) an organic acid; (C) benzotriazole or a benzotriazole derivative; (D) a poly(meth)acrylate; (E) an oxidizing agent; and (F) water, the abrasives (A) being included in the chemical mechanical polishing aqueous dispersion in an amount of 2 to 10wt%.

  一种化学机械抛光水性分散液，包括：(A) 磨料；(B) 有机酸；(C) 苯并三唑或苯并三唑衍生物；(D) 聚（甲基）丙烯酸酯；(E) 氧化剂；以及 (F) 水，其中磨料 (A) 在化学机械抛光水性分散液中的含量为 2 至 10wt%。
• Chemical mechanical polishing aqueous dispersion preparation set, method of preparing chemical mechanical polishing aqueous dispersion, chemical mechanical polishing aqueous dispersion, and chemical mechanical polishing method
  申请人：JSR Corporation

  公开号：EP2017318A2

  公开（公告）日：2009-01-21

  A chemical mechanical polishing aqueous dispersion preparation set including: a first composition which includes colloidal silica having an average primary particle diameter of 15 to 40 nm and a basic compound and has a pH of 8.0 to 11.0; and a second composition which includes poly(meth)acrylic acid and an organic acid having two or more carbonyl groups other than the poly(meth)acrylic acid and has a pH of 1.0 to 5.0.

  一种化学机械抛光水性分散液制备装置，包括：第一种组合物，其中包括平均主颗粒直径为 15 至 40 纳米的胶体二氧化硅和碱性化合物，pH 值为 8.0 至 11.0；第二种组合物，其中包括聚（甲基）丙烯酸和除聚（甲基）丙烯酸外具有两个或两个以上羰基的有机酸，pH 值为 1.0 至 5.0。
• ROSIN MODIFIED PRODUCT, FLUX COMPOSITION, LIQUID FLUX, FLUX CORED SOLDER AND SOLDER PASTE
  申请人：SENJU METAL INDUSTRY CO., LTD.

  公开号：EP3800003A1

  公开（公告）日：2021-04-07

  A rosin-modified product being a reactant of a rosin or a rosin derivative and an alkanolamine represented by a following Formula (1)          (1)     NH3-n-(R-OH)n (n ≤ 3) ; or being produced by a reaction of a rosin or a rosin derivative, an organic acid and an alkanolamine.

  一种松香改性产品 由松香或松香衍生物和下式（1）代表的烷醇胺组成的反应物 (1) NH3-n-(R-OH)n (n≤3) ； 或由松香或松香衍生物、有机酸和烷醇胺反应生成。