Process for Catalytic Cracking of Hydrocarbons Using UZM-35
申请人:Nicholas Christopher P.
公开号:US20100324348A1
公开(公告)日:2010-12-23
Catalytic cracking processes such as fluidized catalytic cracking, naphtha cracking, and olefin cracking are catalyzed by the UZM-35 family of crystalline aluminosilicate zeolites represented by the empirical formula:
M
m
n+
R
r
+
Al
(1-x)
E
x
Si
y
O
z
where M represents a combination of potassium and sodium exchangeable cations, R is a singly charged organoammonium cation such as the dimethyldipropylammonium cation and E is a framework element such as gallium. These UZM-35 zeolites are active and selective in the catalytic cracking of hydrocarbons.
Treatment of an amide with an alkyl or substituted alkyl halide in the presence of a weak base in a one-pot reaction leads to crystalline quaternary ammonium halides with reasonable chemical yields; some of the compounds show low melting points and a liquid range of over 50–100 °C before decomposition.
PROCESS FOR ALKYLATION OF AROMATIC HYDROCARBONS USING UZM-35
申请人:NICHOLAS CHRISTOPHER P.
公开号:US20100331594A1
公开(公告)日:2010-12-30
Alkylation processes such as the alkylation of aromatics, are catalyzed by the UZM-35 family of crystalline aluminosilicate zeolites represented by the empirical formula:
M
m
n+
R
r
+
Al
(1−x)
E
x
Si
y
O
z
where M represents a combination of potassium and sodium exchangeable cations, R is a singly charged organoammonium cation such as the dimethyldipropylammonium cation and E is a framework element such as gallium. These UZM-35 zeolites are active and selective in alkylation processes.
The present invention provides a composition for preparing porous dielectric thin film containing pore-generating material, said composition comprising gemini detergent, fourth alkylammonate, thermo-stable organic or inorganic matrix precursor, and solvent for dissolving said two solid components. There is also provided an interlayer insulating film having good mechanical property such as hardness, modulus and hydroscopicity, which is required for semiconductor devices.