N-<<1-(3,5-dimethoxyphenyl)-1-methylethoxy>carbonyl>piperidine | 129918-81-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: N-<<1-(3,5-dimethoxyphenyl)-1-methylethoxy>carbonyl>piperidine
• 英文别名: 2-(3,5-Dimethoxyphenyl)propan-2-yl piperidine-1-carboxylate
• CAS: 129918-81-6
• 化学式: C₁₇H₂₅NO₄
• 分子量: 307.39
• InChiKey: RLHHJJRGTTYQFW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  22
• 可旋转键数：
  5
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.59
• 拓扑面积：
  48
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  哌啶 、 3,5-dimethoxy-α,α-dimethylbenzenemethanol pentachlorophenyl carbonate ester 以 四氢呋喃 为溶剂， 以59%的产率得到N-<<1-(3,5-dimethoxyphenyl)-1-methylethoxy>carbonyl>piperidine
  参考文献：
  名称：

  Base catalysis in imaging materials. 1. Design and synthesis of novel light-sensitive urethanes as photoprecursors of amines

  摘要：

  DOI：

  10.1021/jo00310a028

文献信息

• METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN
  申请人：Shimizu Daisuke

  公开号：US20100233635A1

  公开（公告）日：2010-09-16

  A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.

  一种形成图案的方法包括：（1）在基板上形成一个底层薄膜，该底层薄膜包含（A）一种辐射敏感的酸发生剂，能够在辐射射线的作用下产生酸，或者（B）一种辐射敏感的碱发生剂，能够在辐射射线的作用下产生碱；（2）通过一个预定图案的掩模，用辐射射线照射底层薄膜，以获得已通过预定图案选择性暴露的底层薄膜部分；（3）在底层薄膜上形成一层有机薄膜，以实现暴露的底层薄膜部分与形成在暴露的底层薄膜部分上的有机薄膜的化学键合；（4）去除除暴露的底层薄膜部分外的底层薄膜区域上形成的有机薄膜。
• THIN FILM TRANSISTOR SUBSTRATE
  申请人：FUKUDA Shunji

  公开号：US20130126860A1

  公开（公告）日：2013-05-23

  A main object of the present invention is to provide a TFT substrate having excellent switching characteristics. The object is attained by providing a thin film transistor substrate comprising: a substrate, and a thin film transistor having an oxide semiconductor layer that is formed on the substrate and is formed from an oxide semiconductor, and a semiconductor layer-adjoining insulating layer formed to be in contact with the oxide semiconductor layer, wherein at least one semiconductor layer-adjoining insulating layer included in the thin film transistor is a photosensitive polyimide insulating layer formed by using a photosensitive polyimide resin composition.

  本发明的主要目的是提供一种具有优异开关特性的TFT基板。该目标通过提供一种薄膜晶体管基板来实现，该基板包括：基板和薄膜晶体管，所述薄膜晶体管具有在基板上形成的氧化物半导体层，该氧化物半导体层由氧化物半导体形成，并且与氧化物半导体层接触的半导体层相邻的绝缘层，其中，在薄膜晶体管中包括的至少一个半导体层相邻的绝缘层是使用光敏聚酰亚胺树脂组合物形成的光敏聚酰亚胺绝缘层来实现的。
• PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, ELEMENT PROVIDED WITH CURED FILM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
  申请人：Toray Industries, Inc.

  公开号：EP3203320A1

  公开（公告）日：2017-08-09

  To provide a photosensitive resin composition which is capable of forming a pattern with high resolution and obtaining a cured film having excellent heat resistance and cracking resistance, and is also alkali developable; and a method capable of shortening the step required to remove a cured film of the composition after formation of an impurity region on a semiconductor substrate; and a method for manufacturing a semiconductor device using the same. Disclosed is a photosensitive resin composition including a polysiloxane (A), wherein the polysiloxane (A) is a polysiloxane represented by the general formula (1), and wherein (X) and (Y) are represented by the general formulas (4) to (6). 7.5≤X≤75 2.5≤Y≤40 1.5×Y≤X≤3×Y

  提供一种光敏树脂组合物，该组合物能够形成具有高分辨率的图案并获得具有优异的耐热性和抗裂性的固化膜，而且还可进行碱显影；提供一种方法，该方法能够缩短在半导体衬底上形成杂质区后去除该组合物固化膜所需的步骤；以及提供一种使用该组合物制造半导体器件的方法。公开了一种包括聚硅氧烷(A)的光敏树脂组合物，其中聚硅氧烷(A)是由通式(1)表示的聚硅氧烷，且(X)和(Y)由通式(4)至(6)表示。7.5≤x≤75 2.5≤y≤40 1.5×y≤x≤3×y
• Photosensitive resin composition, protective film, and liquid crystal display element
  申请人：Chi Mei Corporation

  公开号：US10162260B2

  公开（公告）日：2018-12-25

  The invention shows a photosensitive resin composition which can be used in protective film and liquid crystal display element and provides good transparency and high chemical resistance. The composition includes a complex resin (A), an o-naphthoquinone diazide sulfonate (B), and a solvent (C). The complex resin (A) includes a main chain and a side chain. The main chain includes a repeating unit derived from siloxane (meth)acrylate based monomer (a1-2). The side chain includes a repeating unit derived from siloxane based monomer (a2), and is bonded to the repeating unit derived from siloxane (meth)acrylate based monomer (a1-2). The complex resin (A) satisfies at least one of the following conditions (I) and (II): Condition (I): the main chain further includes a repeating unit derived from unsaturated monomer (a1-1) including a carboxylic acid or a carboxylic anhydride. Condition (II): the siloxane based monomer (a2) includes a monomer (a2-1) represented by formula (A-4).

  本发明展示了一种光敏树脂组合物，可用于保护膜和液晶显示元件，具有良好的透明性和高耐化学腐蚀性。该组合物包括复合树脂（A）、邻萘醌重氮磺酸盐（B）和溶剂（C）。复合树脂（A）包括一条主链和一条侧链。主链包括由硅氧烷（甲基）丙烯酸酯单体（a1-2）衍生的重复单元。侧链包括硅氧烷基单体（a2）衍生的重复单元，并与硅氧烷（甲基）丙烯酸酯基单体（a1-2）衍生的重复单元键合。复合树脂（A）至少满足以下条件（I）和（II）之一： 条件 (I)：主链还包括一个由不饱和单体（a1-1）衍生的重复单元，不饱和单体（a1-1）包括羧酸或羧酸酐。 条件（II）：硅氧烷基单体（a2）包括由式（A-4）表示的单体（a2-1）。
• Photosensitive resin composition, cured film, element provided with cured film, and method for manufacturing semiconductor device
  申请人：TORAY INDUSTRIES, INC.

  公开号：US10409163B2

  公开（公告）日：2019-09-10

  To provide a photosensitive resin composition which is capable of forming a pattern with high resolution and obtaining a cured film having excellent heat resistance and cracking resistance, and is also alkali developable; and a method capable of shortening the step required to remove a cured film of the composition after formation of an impurity region on a semiconductor substrate; and a method for manufacturing a semiconductor device using the same. Disclosed is a photosensitive resin composition including a polysiloxane (A).

  提供一种光敏树脂组合物，该组合物能够形成高分辨率的图案并获得具有优异耐热性和抗裂性的固化膜，而且还可进行碱显影；提供一种方法，该方法能够缩短在半导体衬底上形成杂质区后去除该组合物固化膜所需的步骤；以及提供一种使用该组合物制造半导体器件的方法。本发明公开了一种包括聚硅氧烷（A）的光敏树脂组合物。