Perfluorhexin-3 | 60983-07-5

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 有机氟化物
• 英文名称: Perfluorhexin-3
• 英文别名: decafluoro-3-hexyne；1,1,1,2,2,5,5,6,6,6-Decafluorohex-3-yne
• CAS: 60983-07-5
• 化学式: C₆F₁₀
• 分子量: 262.05
• InChiKey: QQPKEHBKBRNYPA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.8
• 重原子数：
  16
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.67
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  10

反应信息

• 作为反应物：
  描述：

  Perfluorhexin-3 在 Lindlar (5percent Pd on CaCO₃ poisoned with lead) catalyst 氢气 作用下， 以96.7%的产率得到(Z)-3H,4H-decafluorohex-3-ene
  参考文献：
  名称：

  [EN] HIGH SELECTIVITY PROCESS TO MAKE DIHYDROFLUOROALKENES
  [FR] PROCÉDÉ À SÉLECTIVITÉ ÉLEVÉE POUR PRÉPARER DES DIHYDROFLUORALCÈNES

  摘要：

  揭示了一种合成氟代烯烃的方法，包括将具有化学式R1 C≡C R2的氟代炔与Lindlar催化剂在压力容器中接触，其中R1和R2分别独立选择自CF3、C2F5、C3F7和C4F9，在与大致一个摩尔当量的氢气接触，以高选择性制备具有化学式R1 C≡C R2的相应顺式烯烃，所述氢气分批随时间添加，以便在容器内产生初始压力不超过约100 psi。

  公开号：

  WO2009142642A1

文献信息

• HIGH SELECTIVITY PROCESS TO MAKE DIHYDROFLUOROALKENES
  申请人：SWEARINGEN Ekaterina N.

  公开号：US20080269532A1

  公开（公告）日：2008-10-30

  Disclosed is a method for the synthesis of fluorinated alkenes comprising contacting a fluorinated alkyne of the formula R 1 C≡C R 2 , wherein R 1 and R 2 are independently selected from CF 3 , C 2 F 5 , C 3 F 7 , and C 4 F 9 , in a pressure vessel, with a Lindlar catalyst, with substantially one molar equivalent of hydrogen, to make the corresponding cis-alkene of formula R 1 C≡C R 2 with high selectivity, wherein said hydrogen is added in portions over a period of time, so as to produce an initial pressure in the pressure in the vessel of no more than about 100 psi.

  揭示了一种合成氟代烯烃的方法，包括将具有化学式R1C≡C R2的氟代炔与Lindlar催化剂在一个压力容器中接触，其中R1和R2分别选择自CF3、C2F5、C3F7和C4F9，与大约一个摩尔当量的氢反应，以高选择性地制备相应的顺式烯烃，其化学式为R1C≡C R2，其中所述氢在一段时间内分批添加，以使容器内的初始压力不超过约100 psi。
• Gas for plasma reaction, process for producing the same, and use thereof
  申请人：Sugawara Mitsuru

  公开号：US20080139855A1

  公开（公告）日：2008-06-12

  A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

  一种用于等离子反应的气体，包括具有5或6个碳原子的链状全氟烷炔，最好是全氟-2-戊炔。这种等离子反应气体适用于干法刻蚀形成细微图案，用于等离子CVD形成薄膜，以及用于等离子灰化。通过将二氢氟烷化合物或单氢氟烯化合物与碱性化合物接触来合成等离子反应气体。
• Gas for plasma reaction, process for producing the same, and use
  申请人：Sugawara Mitsuru

  公开号：US20050092240A1

  公开（公告）日：2005-05-05

  A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

  一种用于等离子反应的气体，包括一种具有5或6个碳原子的链状全氟烷基炔烃，最好是全氟-2-戊炔。该等离子反应气体适用于干法刻蚀以形成精细图案，用于等离子CVD以形成薄膜，以及用于等离子灰化。该等离子反应气体通过将二氢氟烷化合物或单氢氟烯化合物与碱性化合物接触而合成。
• GAS FOR PLASMA REACTION, PROCESS FOR PRODUCING THE SAME, AND USE
  申请人：Zeon Corporation

  公开号：EP1453082A1

  公开（公告）日：2004-09-01

  A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

  一种等离子反应气体，由具有 5 或 6 个碳原子的链状全氟炔（最好是全氟-2-戊炔）组成。这种等离子反应气体适用于形成精细图案的干法蚀刻、形成薄膜的等离子 CVD 以及等离子灰化。等离子反应气体是通过将二氢氟烷烃化合物或一氢氟烯烃化合物与碱性化合物接触而合成的。
• METHOD OF DRY ETCHING, DRY ETCHING GAS AND PROCESS FOR PRODUCING PERFLUORO-2-PENTYNE
  申请人：Zeon Corporation

  公开号：EP1542268A1

  公开（公告）日：2005-06-15

  A dry etching method wherein a resist film is irradiated with radiation having a wavelength of not more than 195 nm to form a resist pattern having a minimum line width of not more than 200 nm, and the substrate having the resist pattern formed thereon is subjected to dry etching using a fluorine-containing compound having 4 to 6 carbon atoms and at least one unsaturated bond as an etching gas. As the fluorine-containing compound, perfuloro-2-pentyne, perfuloro-2-butyne, nonafluoro-2-pentene and perfluoro-2-pentene are preferably used. Perfuloro-2-pentyne is produced by a process wherein a 1,1,1-trihalo-2,2,2-trifluoroethane is allowed to react with pentafluoropropionaldehyde to give a 2-halo-1,1,1,4,4,5,5,5-octafluoro-2-pentene, and the thus-produced halo-octafluoro-2-pentene is dehydrohalogenated.

  一种干法蚀刻方法，其中用波长不超过 195 纳米的辐射照射抗蚀剂薄膜，以形成最小线宽不超过 200 纳米的抗蚀剂图案，并使用具有 4 至 6 个碳原子和至少一个不饱和键的含氟化合物作为蚀刻气体，对在其上形成了抗蚀剂图案的基板进行干法蚀刻。作为含氟化合物，最好使用全氟-2-戊炔、全氟-2-丁炔、非全氟-2-戊烯和全氟-2-戊烯。全氟-2-戊炔的生产工艺是：1,1,1-三卤-2,2,2-三氟乙烷与五氟丙醛反应生成 2-卤-1,1,1,4,4,5,5,5-八氟-2-戊烯，然后将生成的卤代八氟-2-戊烯进行脱氢卤化。