Silicon-containing resist underlayer film-forming composition and patterning process
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP2599818A1
公开(公告)日:2013-06-05
The present invention is a silicon-containing resist underlayer film-forming composition containing a condensation product and/or a hydrolysis condensation product of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the general formula (2). Thereby, there can be provided a silicon-containing resist underlayer film-forming composition being capable of forming a pattern having a good adhesion, forming a silicon-containing film which can be used as a dry-etching mask between a photoresist film which is the upperlayer film of the silicon-containing film and an organic film which is the underlayer film thereof, and suppressing deformation of the upperlayer resist during the time of dry etching of the silicon-containing film; and a patterning process.
R1m0B(OH)m1(OR)(3-m0-m1) (1)
R10m10R11m11R12m12Si(OR13)(4-m10-m11-m12) (2)
本发明是一种含硅抗蚀剂底层成膜组合物,它含有以下混合物的缩合产物和/或水解缩合产物:一种或多种选自通式(1)所示有机硼化合物及其缩合产物的化合物(A)和一种或多种通式(2)所示硅化合物(B)。因此,可以提供一种含硅抗蚀剂底层成膜组合物,该组合物能够形成具有良好附着力的图案,在作为含硅薄膜的上层薄膜的光刻胶薄膜和作为其底层薄膜的有机薄膜之间形成可用作干蚀刻掩膜的含硅薄膜,并在干蚀刻含硅薄膜时抑制上层抗蚀剂的变形;还可以提供一种图案化工艺。
R1m0B(OH)m1(OR)(3-m0-m1) (1)
R10m10R11m11R12m12Si(OR13)(4-m10-m11-m12) (2)