COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE
申请人:MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
公开号:EP1568744A1
公开(公告)日:2005-08-31
A composition for film formation from which a porous film excelling in dielectric characteristics, adherence, coating film uniformity and mechanical strength and realizing reduced moisture absorption can be prepared; a porous film and a process for producing the same; and a highly reliable semiconductor device of high performance wherein the porous film is incorporated. In particular, a composition for porous film formation, obtained by adding to a siloxane polymer at least one quaternary ammonium salt represented by the general formula: [(R<1>)4N]<+>[R<2>X]<-> (1), or Hk[(R<1>)4N]m<+>Y (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C-CO2, NO3 or NO2; k is 0 or 1; each of m and n is 1 or 2; when n=1, k=0 and m=1; and when n=2, either k=0 and m=2, or k=1 and m=1.
一种可制备介电特性、附着力、涂膜均匀性和机械强度优异的多孔膜并实现降低吸湿性的成膜用组合物;一种多孔膜及其生产工艺;以及一种含有该多孔膜的高性能高可靠性半导体器件。特别是一种用于形成多孔薄膜的组合物,它是通过向硅氧烷聚合物中添加至少一种由通式表示的季铵盐而获得的:[(R)4N][RX](1),或 Hk[(R)4N]mY (2),其中 X 代表 CO2、OSO3 或 SO3;Y 代表 SO4、SO3、CO3、O2C-CO2、NO3 或 NO2;k 为 0 或 1;m 和 n 各为 1 或 2;当 n=1 时,k=0,m=1;当 n=2 时,或者 k=0,m=2,或者 k=1,m=1。