Nickel/Brønsted acid dual-catalyzed regio- and enantioselective hydrophosphinylation of 1,3-dienes: access to chiral allylic phosphine oxides
作者:Jiao Long、Yuqiang Li、Weining Zhao、Guoyin Yin
DOI:10.1039/d1sc05651d
日期:——
While chiral allylic organophosphorus compounds are widely utilized in asymmetric catalysis and for accessing bioactive molecules, their synthetic methods are still very limited. We report the development of asymmetric nickel/Brønsted acid dual-catalyzed hydrophosphinylation of 1,3-dienes with phosphine oxides. This reaction is characterized by an inexpensive chiral catalyst, broad substrate scope
Palladium-Catalyzed Enantioselective Hydrohydrazonation of 1,3-Dienes
作者:Shaozi Sun、Qinglong Zhang、Weiwei Zi
DOI:10.1021/acs.orglett.3c02729
日期:2023.12.1
We presented a method for synthesizing allylic chiral hydrazones from 1,4-disubstituted 1,3-dienes and hydrazones through a (R)-DTBM-Segphos-Pd(0)-catalyzed hydrohydrazonation reaction. This transformation has a wide range of substrates and good functional group tolerance. The desired products were obtained in medium to high yield and good regio- and enantioselectivity. Synthetic transformation of
我们提出了一种通过 ( R )-DTBM-Segphos-Pd(0) 催化的氢腙反应从 1,4-二取代 1,3-二烯和腙合成烯丙基手性腙的方法。该转化具有广泛的底物范围和良好的官能团耐受性。以中等至高产率和良好的区域选择性和对映选择性获得了所需产物。证明了产物合成转化为各种含氮手性化合物。
Silicon compound, ultraviolet absorbent, method for manufacturing multilayer wiring device and multilayer wiring device
申请人:Fujitsu Limited
公开号:EP2028215A1
公开(公告)日:2009-02-25
A layer of a porous insulating film precursor is formed on or over a substrate, a layer of a specific silicon compound is then formed, this silicon compound layer is precured as necessary, and the porous insulating film precursor is exposed to UV through the silicon compound layer or precured layer.
SILICON COMPOUND, ULTRAVIOLET ABSORBENT, METHOD FOR MANUFACTURING MULTILAYER WIRING DEVICE AND MULTILAYER WIRING DEVICE
申请人:Fujitsu Limited
公开号:EP2028215B1
公开(公告)日:2018-08-01
Material for forming exposure light-blocking film, multilayer interconnection structure and manufacturing method thereof, and semiconductor device
申请人:Ozaki Shirou
公开号:US20070190461A1
公开(公告)日:2007-08-16
To provide a material for forming an exposure light-blocking film which includes at least one of a silicon compound expressed by the following structural formula (1) and a silicon compound expressed by the following structural formula (2), wherein at least one of R
1
and R
2
is replaced by a substitutent capable of absorbing exposure light.
(where R
1
and R
2
may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)
(where R
1
, R
2
and R
3
may be the same or different, at least one of R
1
, R
2
and R
3
represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)