To provide a lower layer resist composition for a silicon-containing two-layer resist, which is excellent in the dry etching resistance and film thickness uniformity.
A lower layer resist composition for a silicon-containing two-layer resist, comprising (a) a phenol-based polymer, (b) a compound capable of generating a sulfonic acid at a temperature of 100° C. or more, (c) a phenol-based acid crosslinking agent having two or more benzene rings and capable of crosslinking with the polymer under the action of an acid, and (d) a solvent.
提供一种用于含
硅双层抗蚀剂的下层抗蚀剂组合物,它具有优异的耐干蚀刻性和薄膜厚度均匀性。
一种用于含
硅双层抗蚀剂的下层抗蚀剂组合物,包括:(a)
苯酚基聚合物;(b) 能在 100 摄氏度或更高温度下生成
磺酸的化合物;(c) 具有两个或两个以上苯环并能在酸的作用下与聚合物交联的
苯酚基酸
交联剂;(d) 溶剂。