COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY
申请人:Sakamoto Rikimaru
公开号:US20120040291A1
公开(公告)日:2012-02-16
There is provided a compositions of resist underlayer films for EUV lithography that is used in a production process of devices employing EUV lithography, that reduces adverse effects caused by EUV, and that has a beneficial effect on the formation of a favorable resist pattern; and a method for forming resist patterns using the composition of resist underlayer films for EUV lithography. A composition for forming a resist underlayer film for an EUV lithography process used in production of a semiconductor device, comprising a novolac resin containing a halogen atom. The novolac resin may include a cross-linkable group composed of an epoxy group, a hydroxy group, or a combination thereof. The halogen atom may be a bromine atom or an iodine atom. The novolac resin may be a reaction product of a novolac resin or an epoxidized novolac resin and a halogenated benzoic acid; or a reaction product of a glycidyloxy novolac resin and diiodosalicylic acid.
US9005873B2
申请人:——
公开号:US9005873B2
公开(公告)日:2015-04-14
An Efficient Method for the Chemoselective Preparation of Benzoylated 1,2-Diols from Epoxides
作者:A. Khalafi-Nezhad、M. N. Soltani Rad、A. Khoshnood
DOI:10.1055/s-2003-42416
日期:——
A very efficient and highly regioselective ring-opening reaction of epoxides with benzoic acid and its derivatives in the presence of cat. amount of tetrabutylammonium bromide (TBAB) in anhydrous acetonitrile has been developed. This effective method is useful for the preparation of selectively protected diols as precursor for many organic syntheses such as those of acyclic nucleosides and other synthetic